IRFPS30N60KPBF Datasheet, PDF (2/8 Pages) International Rectifier – SMPS MOSFET

IRFPS30N60KPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
I_GSS
Gate-to-Source Reverse Leakage
600 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.66 ––– V/°C Reference to 25°C, I_D = 1mA†
––– 160 190 mΩ V_GS = 10V, I_D = 18A „
3.0 ––– 5.0 V V_DS = V_GS, I_D = 250µA
––– ––– 50 _µA V_DS = 600V, V_GS = 0V
––– ––– 250
V_DS = 480V, V_GS = 0V, T_J = 125°C
––– ––– 100 _nA V_GS = 30V
––– ––– -100
V_GS = -30V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g_fs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
16 ––– –––
––– ––– 220
––– ––– 64
––– ––– 110
––– 29 –––
––– 120 –––
––– 56 –––
––– 50 –––
––– 5870 –––
––– 530 –––
––– 54 –––
––– 6920 –––
––– 140 –––
––– 270 –––
S V_DS = 50V, I_D = 18A
I_D = 30A
nC V_DS = 480V
V_GS = 10V „
V_DD = 300V
ns ^{ID = 30A}
R_G = 3.9 Ω
V_GS = 10V „
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 480V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 480V …
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
t_rr
Q_rr
I_RRM
t_on
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting T_J = 25°C, L = 1.1mH, R_G = 25Ω,
I_AS = 30A
ƒ I_SD ≤ 30A, di/dt ≤ 630A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 30
A ^{showing the}
integral reverse
G
––– ––– 120
p-n junction diode.
S
––– ––– 1.5 V T_J = 25°C, I_S = 30A, V_GS = 0V „
––– 640 960 ns T_J = 25°C, I_F = 30A
––– 11 16 µC di/dt = 100A/µs „
––– 31 ––– A
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS
† R_θ is measured at T_J approximately 90°C
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