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IRFPS29N60LPBF Datasheet, PDF (2/9 Pages) International Rectifier – SMPS MOSFET | |||
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IRFPS29N60LPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
IDSS
IGSS
RG
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
600
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
0.53
175
âââ
âââ
âââ
âââ
âââ
0.86
Max. Units
Conditions
âââ V VGS = 0V, ID = 250µA
âââ V/°C Reference to 25°C, ID = 1mA
f 210 m⦠VGS = 10V, ID = 17A
5.0 V VDS = VGS, ID = 250µA
50 µA VDS = 600V, VGS = 0V
2.0 mA VDS = 480V, VGS = 0V, TJ = 125°C
100 nA VGS = 30V
-100
VGS = -30V
âââ ⦠f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.
Coss eff. (ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
15 âââ âââ
âââ âââ 220
âââ âââ 67
âââ âââ 96
âââ 34 âââ
âââ 100 âââ
âââ 66 âââ
âââ 54 âââ
âââ 6160 âââ
âââ 530 âââ
âââ 44 âââ
âââ 250 âââ
âââ 190 âââ
S VDS = 50V, ID = 17A
ID = 29A
nC VDS = 480V
f VGS = 10V, See Fig. 7 & 15
VDD = 300V
ns ID = 29A
f RG = 4.3â¦
VGS = 10V, See Fig. 11a & 11b
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz, See Fig. 5
g VGS = 0V,VDS = 0V to 480V
(Energy Related)
Avalanche Characteristics
Symbol
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
 Repetitive Avalanche Energy
Typ.
âââ
âââ
âââ
Max.
570
29
48
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
h Parameter
Junction-to-Case
h Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
âââ
0.24
âââ
Max.
0.26
âââ
40
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
 Starting TJ = 25°C, L = 1.5mH, RG = 25â¦,
IAS = 29A. (See Figure 12a)
 ISD ⤠29A, di/dt ⤠830A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C.
2
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while VDS is rising from 0 to 80% VDSS.
 Rθ is measured at TJ approximately 90°C
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