|
IRFP90N20DPBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – High frequency DC-DC converters | |||
|
◁ |
IRFP90N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ âââ V
0.24 âââ V/°C
âââ 0.023 â¦
âââ 5.0 V
âââ 25 µA
âââ 250
âââ 100
nA
âââ -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 56A Â
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
39 âââ âââ
Qg
Total Gate Charge
âââ 180 270
Qgs
Gate-to-Source Charge
âââ 45 67
Qgd
Gate-to-Drain ("Miller") Charge
âââ 87 130
td(on)
Turn-On Delay Time
âââ 23 âââ
tr
Rise Time
âââ 160 âââ
td(off)
Turn-Off Delay Time
âââ 43 âââ
tf
Fall Time
âââ 79 âââ
Ciss
Input Capacitance
âââ 6040 âââ
Coss
Output Capacitance
âââ 1070 âââ
Crss
Reverse Transfer Capacitance
âââ 170 âââ
Coss
Output Capacitance
âââ 8350 âââ
Coss
Output Capacitance
âââ 420 âââ
Coss eff. Effective Output Capacitance
âââ 870 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 56A
ID = 56A
VDS = 160V
VGS = 10V, Â
VDD = 100V
ID = 56A
RG = 1.2â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
1010
56
58
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 94o A showing the
âââ âââ 380
integral reverse
G
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 56A, VGS = 0V Â
âââ 230 340 ns TJ = 25°C, IF = 56A
âââ 1.9 2.8 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
|
▷ |