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| IRFP4868PBF Datasheet, PDF (2/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS | |||
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IRFP4868PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ïV(BR)DSS/ïTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance
(Energy Related) ï
Coss eff. (TR) Effective Output Capacitance
(Time Related)ï
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ï
VSD
dv/dt
Diode Forward Voltage
Peak Diode Recovery ï
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Notes:
ï Repetitive rating; pulse width limited by max.
junction temperature.
ï Limited by TJmax, starting TJ = 25°C, L = 1.2mH
RG = 50ï, IAS = 42A, VGS =10V. Part not
recommended for use above this value.
ï ISD ⤠42A, di/dt ⤠1706A/µs, VDD ⤠V(BR)DSS, TJ â¤
175°C.
ï Pulse width ⤠400µs; duty cycle ⤠2%.
Min.
300
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
0.29
25.5
âââ
âââ
âââ
âââ
âââ
1.1
Max. Units
Conditions
âââ V VGS = 0V, ID = 250µA
âââ V/°C Reference to 25°C, ID = 5mAï
32 mï VGS = 10V, ID = 42A ï
5.0 V VDS = VGS, ID = 250µA
20 µA VDS = 300V, VGS = 0V
250
VDS = 300V, VGS = 0V, TJ = 125°C
100 nA VGS = 20V
-100
VGS = -20V
âââ ïï
Min. Typ. Max. Units
Conditions
80 âââ âââ S VDS = 50V, ID = 42A
âââ 180 270 nC ID = 42A
âââ 60 âââ
VDS =150V
âââ 57 âââ
VGS = 10V ï
âââ 123 âââ
âââ 24 âââ
âââ 16 âââ
ID = 42A, VDS =0V, VGS = 10V
ns VDD = 195V
ID = 42A
âââ 62 âââ
âââ 45 âââ
RG = 1.0ï
VGS = 10V ï
âââ 10774 âââ
âââ 612 âââ
âââ 193 âââ
pF VGS = 0V
VDS = 50V
Æ = 1.0 MHz, See Fig. 5
âââ 406 âââ
VGS = 0V, VDS = 0V to 240V ï,
See Fig. 11
âââ 710 âââ
VGS = 0V, VDS = 0V to 240V ï
Min. Typ. Max. Units
Conditions
âââ âââ 70 A MOSFET symbol
D
showing the
âââ âââ 280 A integral reverse
G
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 42A, VGS = 0V ï
âââ 7.3 âââ V/ns TJ = 25°C, IS = 42A, VDS = 300V
âââ 351 âââ
âââ 454 âââ
âââ 2520 âââ
âââ 3686 âââ
ns TJ = 25°C
TJ = 125°C
nC TJ = 25°C
TJ = 125°C
VR = 255V,
IF = 42A
di/dt = 100A/µs ï
âââ 16 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by
LS+LD)
ï
Coss eff. (TR) is a fixed capacitance that gives
the same charging time as Coss while VDS is
rising from 0 to 80% VDSS.
ï Coss eff. (ER) is a fixed capacitance that gives
the same energy as Coss while VDS is rising
from 0 to 80% VDSS.
ï Rï± is measured at TJ approximately 90°C.
ï Rï±JC value shown is at time zero.
2 www.irf.com © 2012 International Rectifier
October 30, 2012
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