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IRFP4768PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS | |||
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IRFP4768PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
250 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.20 âââ V/°C Reference to 25°C, ID = 5mAc
âââ 14.5 17.5 m⦠VGS = 10V, ID = 56A f
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
âââ âââ 20 µA VDS = 250V, VGS = 0V
âââ âââ 250
VDS = 250V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ 0.71 âââ â¦
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
100 âââ âââ
Qg
Total Gate Charge
âââ 180 270
Qgs
Gate-to-Source Charge
âââ 52 âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ 72 âââ
Qsync
Total Gate Charge Sync. (Qg - Qgd)
âââ 108 âââ
td(on)
Turn-On Delay Time
âââ 36 âââ
tr
Rise Time
âââ 160 âââ
td(off)
Turn-Off Delay Time
âââ 57 âââ
tf
Fall Time
âââ 110 âââ
Ciss
Input Capacitance
âââ 10880 âââ
Coss
Output Capacitance
âââ 700 âââ
Crss
Reverse Transfer Capacitance
âââ 210 âââ
Coss eff. (ER) Effective Output Capacitance (Energy Related) h âââ 510 âââ
Coss eff. (TR) Effective Output Capacitance (Time Related)g âââ 830 âââ
S VDS = 50V, ID = 56A
nC ID = 56A
VDS =125V
VGS = 10V f
ID = 56A, VDS =0V, VGS = 10V
ns VDD = 163V
ID = 56A
RG = 1.0â¦
VGS = 10V f
pF VGS = 0V
VDS = 50V
Æ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 200V h, See Fig. 11
VGS = 0V, VDS = 0V to 200V g
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 93 A MOSFET symbol
D
showing the
âââ âââ 370 A integral reverse
G
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 56A, VGS = 0V f
âââ 180 âââ ns TJ = 25°C
VR = 200V,
âââ 200 âââ
TJ = 125°C
âââ 1480 âââ nC TJ = 25°C
IF = 56A
di/dt = 100A/µs f
âââ 2260 âââ
TJ = 125°C
âââ 16 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.50mH
RG = 25â¦, IAS = 56A, VGS =10V. Part not recommended for use
above this value.
 ISD ⤠56A, di/dt ⤠950A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 Rθ is measured at TJ approximately 90°C.
 RθJC value shown is at time zero.
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