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IRFP4568PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS | |||
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IRFP4568PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
150
âââ
âââ
âââ
0.17
4.8
âââ
âââ
5.9
V VGS = 0V, ID = 250µA
 V/°C Reference to 25°C, ID = 5mA
f m⦠VGS = 10V, ID = 103A
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
âââ âââ 20
âââ âââ 250
µA
VDS =150V, VGS = 0V
VDS = 150V, VGS = 0V, TJ = 125°C
âââ
âââ
âââ 100
âââ -100
nA
VGS = 20V
VGS = -20V
âââ 1.0 âââ â¦
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
162 âââ âââ
Total Gate Charge
âââ 151 227
Gate-to-Source Charge
âââ 52 âââ
Gate-to-Drain ("Miller") Charge
âââ 55 âââ
Total Gate Charge Sync. (Qg - Qgd)
âââ 96 âââ
Turn-On Delay Time
âââ 27 âââ
Rise Time
âââ 119 âââ
Turn-Off Delay Time
âââ 47 âââ
Fall Time
âââ 84 âââ
Input Capacitance
âââ 10470 âââ
Output Capacitance
âââ 977 âââ
Reverse Transfer Capacitance
âââ 203 âââ
h Effective Output Capacitance (Energy Related) âââ 897 âââ
g Effective Output Capacitance (Time Related)
âââ 1272 âââ
S VDS = 50V, ID = 103A
ID = 103A
nC
VDS = 75V
f VGS = 10V
f ID = 103A, VDS =0V, VGS = 10V
VDD = 98V
ns
ID =103A
f RG =1.0â¦
VGS = 10V
VGS = 0V
VDS = 50V
pF Æ = 1.0MHz, (See Fig 5)
h VGS = 0V, VDS = 0V to 120V (SeeFig.11)
g VGS = 0V, VDS = 0V to 120V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 171 A
showing the
âââ âââ 684
âââ âââ 1.3
integral reverse
G
A
p-n junction diode.
S
f V TJ = 25°C, IS = 103A, VGS = 0V
âââ 110 âââ
âââ 133 âââ
ns
TJ = 25°C
TJ = 125°C
âââ 515
âââ 758
âââ
âââ
nC
TJ = 25°C
TJ = 125°C
VR = 100V,
f IF = 103A
di/dt = 100A/µs
âââ 8.8 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.144mH
RG = 25â¦, IAS = 103A, VGS =10V. Part not recommended for use
above this value.
 ISD ⤠103A, di/dt ⤠360A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C.
2
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