|
IRFP450APBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET®Power MOSFET | |||
|
◁ |
IRFP450APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ
RDS(on)
Static Drain-to-Source On-Resistance âââ
VGS(th)
Gate Threshold Voltage
2.0
âââ
IDSS
Drain-to-Source Leakage Current
âââ
Gate-to-Source Forward Leakage
âââ
IGSS
Gate-to-Source Reverse Leakage
âââ
âââ âââ
0.58 âââ
âââ 0.40
âââ 4.0
âââ 25
âââ 250
âââ 100
âââ -100
V
V/°C
â¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mAÂ
VGS = 10V, ID = 8.4A Â
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min. Typ. Max. Units
Conditions
7.8 âââ âââ S VDS = 50V, ID = 8.4A
âââ âââ 64
ID = 14A
âââ âââ 16
âââ âââ 26
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 Â
âââ 15 âââ
VDD = 250V
âââ 36 âââ ns ID = 14A
âââ 35 âââ
RG = 6.2â¦
âââ 29 âââ
RD = 17â¦,See Fig. 10 Â
âââ 2038 âââ
VGS = 0V
âââ 307 âââ
VDS = 25V
âââ 10 âââ pF Æ = 1.0MHz, See Fig. 5
âââ 2859 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
âââ 81 âââ
âââ 96 âââ
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
760
14
19
Units
mJ
A
mJ
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
Typ.
âââ
0.24
Max.
0.65
âââ
40
Units
°C/W
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 14
A showing the
integral reverse
G
âââ âââ 56
p-n junction diode.
S
âââ âââ 1.4 V TJ = 25°C, IS = 14A, VGS = 0V Â
âââ 487 731 ns TJ = 25°C, IF = 14A
âââ 3.9 5.8 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
|
▷ |