IRFP4321PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – Motion Control Applications

IRFP4321PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
I_GSS
R_G(int)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
Typ.
–––
150
12
–––
–––
–––
–––
–––
0.8
Max. Units
Conditions
––– V V_GS = 0V, I_D = 250µA
––– mV/°C Reference to 25°C, I_D = 1mAd
15.5 mΩ V_GS = 10V, I_D = 33A f
5.0 V V_DS = V_GS, I_D = 250µA
20 µA V_DS = 150V, V_GS = 0V
1.0 mA V_DS = 150V, V_GS = 0V, T_J = 125°C
100 nA V_GS = 20V
-100
–––
V_GS = -20V
Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
130 ––– –––
––– 71 110
––– 24 –––
––– 21 –––
––– 18 –––
––– 60 –––
––– 25 –––
––– 35 –––
––– 4460 –––
––– 390 –––
––– 82 –––
S V_DS = 25V, I_D = 50A
nC I_D = 50A
V_DS = 75V
V_GS = 10V f
ns V_DD = 75V
I_D = 50A
R_G = 2.5Ω
V_GS = 10V f
pF V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) d
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– ^78c A MOSFET symbol
D
––– ––– 330
showing the
A integral reverse
p-n junction diode.
G
S
––– ––– 1.3 V T_J = 25°C, I_S = 50A, V_GS = 0V f
––– 89 130 ns I_D = 50A
––– 300 450 nC V_R = 128V,
––– 6.5 ––– A ^{di/dt = 100A/µs f}
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.17mH
R_G = 25Ω, I_AS = 50A, V_GS =10V. Part not recommended for use
above this value.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… R_θ is measured at T_J approximately 90°C
2
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