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| IRFP3703PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – Synchronous Rectification | |||
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IRFP3703PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ
RDS(on)
âââ
Static Drain-to-Source On-Resistance âââ
VGS(th)
Gate Threshold Voltage
2.0
âââ
IDSS
Drain-to-Source Leakage Current
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
âââ âââ
0.028 âââ
2.3 2.8
2.8 3.9
âââ 4.0
âââ 20
âââ 250
âââ 200
âââ -200
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 76A Â
VGS = 7.0V, ID = 76A Â
V VDS = VGS, ID = 250µA
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
nA VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
150 âââ âââ S VDS = 24V, ID = 76A
Qg
Total Gate Charge
âââ 209 âââ
ID = 76A
Qgs
Gate-to-Source Charge
âââ 62 âââ nC VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
âââ 42 âââ
VGS = 10V, Â
td(on)
Turn-On Delay Time
âââ 18 âââ
VDD = 15V, VGS = 10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 123 âââ ns ID = 76A
âââ 53 âââ
RG = 1.8â¦
âââ 24 âââ
VGS = 10V Â
Ciss
Input Capacitance
âââ 8250 âââ
VGS = 0V
Coss
Output Capacitance
âââ 3000 âââ
VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 290 âââ pF Æ = 1.0MHz
Coss
Output Capacitance
âââ 10360 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
âââ 3060 âââ
âââ 2590 âââ
VGS = 0V, VDS = 24V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 24V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
1700
76
23
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
âââ
âââ
âââ
âââ
âââ
Typ. Max. Units
âââ 210Â
A
âââ 1000
0.8 1.3 V
80 120 ns
185 275 nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 76A, VGS = 0V Â
TJ = 25°C, IF = 76A, VDS = 16V
di/dt = 100A/µs Â
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