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IRFP3077PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS | |||
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IRFP3077PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ÎV(BR)DSS/ÎTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Gate Input Resistance
75 âââ âââ
âââ 0.091 âââ
âââ 2.8 3.3
V VGS = 0V, ID = 250μA
d V/°C Reference to 25°C, ID = 5mA
g mΩ VGS = 10V, ID = 75A
2.0 âââ 4.0 V VDS = VGS, ID = 250μA
âââ âââ 20 μA VDS = 75V, VGS = 0V
âââ âââ 250
VDS = 75V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ 1.2 âââ Ω f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
160 âââ âââ
Qg
Total Gate Charge
âââ 160 220
Qgs
Gate-to-Source Charge
âââ 37 âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ 42 âââ
td(on)
Turn-On Delay Time
âââ 25 âââ
tr
Rise Time
âââ 87 âââ
td(off)
Turn-Off Delay Time
âââ 69 âââ
tf
Fall Time
âââ 95 âââ
Ciss
Input Capacitance
âââ 9400 âââ
Coss
Output Capacitance
âââ 820 âââ
Crss
Reverse Transfer Capacitance
âââ
i Coss eff. (ER) Effective Output Capacitance (Energy Related) âââ
h Coss eff. (TR) Effective Output Capacitance (Time Related)
âââ
350
1090
1260
âââ
âââ
âââ
S VDS = 50V, ID = 75A
nC ID = 75A
g VDS = 38V
VGS = 10V
ns VDD = 38V
ID = 75A
g RG = 2.1Ω
VGS = 10V
pF VGS = 0V
VDS = 50V
Æ = 1.0MHz
j VGS = 0V, VDS = 0V to 60V , See Fig.11
h VGS = 0V, VDS = 0V to 60V , See Fig. 5
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãdi (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
 âââ âââ 200 A MOSFET symbol
D
showing the
âââ âââ 850
integral reverse
G
p-n junction diode.
S
g âââ âââ 1.3 V TJ = 25°C, IS = 75A, VGS = 0V
âââ 42 63 ns TJ = 25°C
VR = 64V,
âââ 50 75
TJ = 125°C
âââ 59 89 nC TJ = 25°C
g IF = 75A
di/dt = 100A/μs
âââ 86 130
TJ = 125°C
âââ 2.5 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.028mH
RG = 25Ω, IAS = 120A, VGS =10V. Part not recommended for use
above this value .
 ISD ⤠75A, di/dt ⤠400A/μs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
2
Â
Pulse width ⤠400μs; duty cycle ⤠2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 Rθ is measured at TJ approximately 90°C
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