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| IRFP3006PBF Datasheet, PDF (2/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS | |||
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Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ïV(BR)DSS/ïTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
Qsync
Total Gate Charge Sync. (Qg - Qgd)
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance
(Energy Related)
Coss eff. (TR) Effective Output Capacitance
(Time Related)
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ï
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
IRFP3006PbF
Min.
60
âââ
âââ
2.0
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
0.07
2.1
âââ
âââ
âââ
âââ
âââ
2.0
Max. Units
Conditions
âââ V VGS = 0V, ID = 250µA
âââ V/°C Reference to 25°C, ID = 5mAï
2.5 mï VGS = 10V, ID = 170A ï
4.0 V VDS = VGS, ID = 250µA
20 µA VDS = 60V, VGS = 0V
250
VDS = 60V, VGS = 0V, TJ = 125°C
100 nA VGS = 20V
-100
VGS = -20V
âââ ïï
Min.
280
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
200
37
60
140
16
182
118
189
8970
1020
534
1480
1920
Max. Units
Conditions
âââ S VDS = 25V, ID = 170A
300
ID = 170A
âââ
âââ
nC
VDS =30V
VGS = 10V ï
âââ
ID = 170A, VDS =0V, VGS = 10V
âââ
VDD = 39V
âââ
âââ
ns
ID = 170A
RG = 2.7ï
âââ
VGS = 10V ï
âââ
VGS = 0V
âââ
VDS = 50V
âââ
âââ
pF
Æ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 48V ïï
See Fig. 11
âââ
VGS = 0V, VDS = 0V to 48V ï
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
44
48
63
77
2.4
Max. Units
Conditions
257ï
A
1028
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
1.3 V TJ = 25°C, IS = 170A, VGS = 0V ï
âââ ns TJ = 25°C
âââ
TJ = 125°C
âââ nC TJ = 25°C
âââ
TJ = 125°C
âââ A TJ = 25°C
VR = 51V,
IF = 170A
di/dt = 100A/µs ï
Notes:
ï Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)ï
ï Repetitive rating; pulse width limited by max. Junction temperature.
ï Limited by TJmax, starting TJ = 25°C, L = 0.022mH, RG = 50ï, IAS = 170A,VGS =10V. Part not Recommended for use above
this value.
ï ISD ⤠170A, di/dt ⤠1360A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
ï
Pulse width ⤠400µs; duty cycle ⤠2%.
ï Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
ï Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
ï Rï± is measured at TJ approximately 90°C.
* All spec data and curves based on (TO-220 Pak -IRFB3006PbF) Datasheet.
2 www.irf.com © 2013 International Rectifier
September 06, 2013
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