|
IRFP2907ZPBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – Advanced Process Technology | |||
|
◁ |
IRFP2907ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75 âââ âââ
âââ 0.069 âââ
âââ 3.5 4.5
2.0 âââ 4.0
V VGS = 0V, ID = 250µA
f V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 90A
V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
180 âââ âââ S VDS = 25V, ID = 90A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 75V, VGS = 0V
âââ âââ 250
VDS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Qg
Total Gate Charge
âââ 180 270
ID = 90A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ
âââ
46
65
âââ
âââ
f nC VDS = 60V
VGS = 10V
td(on)
Turn-On Delay Time
âââ 19 âââ ns VDD = 38V
tr
Rise Time
âââ 140 âââ
ID = 90A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ 97 âââ
âââ 100 âââ
f RG = 2.5â¦
VGS = 10V
LD
Internal Drain Inductance
âââ 5.0 âââ nH Between lead,
D
LS
Internal Source Inductance
6mm (0.25in.)
âââ 13 âââ
from package
G
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
IS
Continuous Source Current
âââ 7500 âââ
âââ 970 âââ
âââ 510 âââ
âââ 3640 âââ
âââ 650 âââ
âââ 1020 âââ
and center of die contact
S
pF VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 60V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Min. Typ. Max. Units
Conditions
âââ âââ 90
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
âââ âââ 680
integral reverse
G
âââ âââ 1.3
f p-n junction diode.
S
V TJ = 25°C, IS = 90A, VGS = 0V
âââ 41
âââ 59
61
89
f ns TJ = 25°C, IF = 90A, VDD = 38V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
 Limited by TJmax, starting TJ = 25°C,
L=0.13mH, RG = 25â¦, IAS = 90A, VGS =10V.
Part not recommended for use above this value.
 ISD ⤠90A, di/dt ⤠340A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C.
 Pulse width ⤠1.0ms; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
 This value determined from sample failure population. 100%
tested to this value in production.
 Rθ is measured at TJ of approximately 90°C.
2
www.irf.com
|
▷ |