IRFP260MPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET® Power MOSFET

IRFP260MPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V(BR)DSS/∆TJ
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
C_iss
C_oss
C_rss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
200
–––
–––
2.0
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.26 –––
––– 0.04
––– 4.0
––– –––
––– 25
––– 250
––– 100
––– -100
––– 234
––– 38
––– 110
17 –––
60 –––
55 –––
48 –––
5.0 –––
13 –––
4057 –––
603 –––
161 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 28A „
V_DS = V_GS, I_D = 250µA
V_DS = 50V, I_D = 28A „
V_DS = 200V, V_GS = 0V
V_DS = 160V, V_GS = 0V, T_J = 150°C
V_GS = 20V
V_GS = -20V
I_D = 28A
V_DS = 160V
V_GS = 10V „
V_DD = 100V
I_D = 28A
R_G = 1.8Ω
V_GS = 10V „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 50
A ^{showing the}
integral reverse
G
––– ––– 200
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 28A, V_GS = 0V „
––– 268 402 ns T_J = 25°C, I_F = 28A
––– 1.9 2.8 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting T_J = 25°C, L = 1.5mH
R_G = 25Ω, I_AS = 28A.
ƒ I_SD ≤ 28A, di/dt ≤ 486A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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