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IRFP1405PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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IRFP1405PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
âââ 0.058 âââ
âââ 4.2 5.3
e V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 95A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
77 âââ âââ S VDS = 25V, ID = 95A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 55V, VGS = 0V
âââ âââ 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Qg
Total Gate Charge
âââ 120 180
ID = 95A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ
âââ
30
53
âââ
âââ
e nC VDS = 44V
VGS = 10V
td(on)
Turn-On Delay Time
âââ 12 âââ
VDD = 28V
tr
Rise Time
âââ 160 âââ
ID = 95A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ 140 âââ
âââ 150 âââ
e ns RG = 2.6 â¦
VGS = 10V
LD
Internal Drain Inductance
âââ 5.0 âââ
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
âââ 13 âââ
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 5600 âââ
âââ 1310 âââ
âââ 350 âââ
âââ 6550 âââ
âââ 920 âââ
âââ 1750 âââ
and center of die contact
S
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 44V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 95
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 640
A showing the
integral reverse
âââ âââ 1.3
âââ 70 110
âââ 170 260
e p-n junction diode.
V TJ = 25°C, IS = 95A, VGS = 0V
e ns TJ = 25°C, IF = 95A, VDD = 28V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
 Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
 Limited by TJmax, starting TJ = 25°C, L = 0.12mH Â
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25â¦, IAS = 95A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
 This value determined from sample failure population. 100%
 Pulse width ⤠1.0ms; duty cycle ⤠2%.
tested to this value in production.
2
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