IRFIZ34E Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A)

IRFIZ34E
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Qg
Q_gs
Q_gd
td(on)
tr
td(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
Ciss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
C
Drain to Sink Capacitance
Min. Typ. Max. Units
60 ––– ––– V
––– 0.052 ––– V/°C
––– ––– 0.042 Ω
2.0 ––– 4.0 V
6.5 ––– ––– S
––– ––– 25 _µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– ––– 34
––– ––– 6.8 nC
––– ––– 14
––– 7.0 –––
––– 49 –––
ns
––– 31 –––
––– 40 –––
––– 4.5 –––
nH
––– 7.5 –––
––– 700 –––
––– 240 ––– _pF
––– 100 –––
––– 12 –––
Conditions
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA†
VGS = 10V, ID = 11A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 16A†
V_DS = 60V, V_GS = 0V
V_DS = 48V, V_GS = 0V, T_J = 150°C
VGS = 20V
VGS = -20V
ID = 16A
V_DS = 44V
V_GS = 10V, See Fig. 6 and 13 „†
VDD = 28V
ID = 16A
RG = 18Ω
R_D = 1.8Ω, See Fig. 10 „†
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
V_DS = 25V
ƒ = 1.0MHz, See Fig. 5†
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) †
V_SD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 21
A ^{showing the}
integral reverse
G
––– ––– 100
p-n junction diode.
S
––– ––– 1.6 V T_J = 25°C, I_S = 11A, V_GS = 0V „
––– 57 86 ns TJ = 25°C, IF = 16A
––– 130 200 µC di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD = 25V, starting T_J = 25°C, L = 610µH
R_G = 25Ω, I_AS = 16A. (See Figure 12)
ƒ I_SD ≤ 16A, di/dt ≤ 420A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… t=60s, ƒ=60Hz
† Uses IRFZ34N data and test conditions