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| IRFIB6N60APBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFIB6N60APbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min.
600
âââ
âââ
2.0
âââ
âââ
âââ
âââ
Typ.
âââ
0.66
âââ
âââ
âââ
âââ
âââ
âââ
Max.
âââ
âââ
0.75
4.0
25
250
100
-100
Units
V
V/°C
â¦
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mAÂ
VGS = 10V, ID = 3.3.A Â
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
5.5 âââ âââ S VDS = 25V, ID = 5.5A
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ âââ 49
ID = 9.2A
âââ âââ 13 nC VDS = 400V
âââ âââ 20
VGS = 10V, See Fig. 6 and 13 Â
âââ 13 âââ
VDD = 300V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
âââ 25 âââ ns ID = 9.2A
âââ 30 âââ
RG = 9.1â¦
âââ 22 âââ
RD = 35.5â¦,See Fig. 10 Â
âââ 1400 âââ
VGS = 0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
âââ 180 âââ
VDS = 25V
âââ 7.1 âââ pF Æ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
âââ 1957 âââ
âââ 49 âââ
âââ 96 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 480V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 480V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
290
9.2
6.0
Units
mJ
A
mJ
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Diode Characteristics
Typ.
âââ
âââ
Max.
2.1
65
Units
°C/W
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 5.5
A showing the
integral reverse
G
âââ âââ 37
p-n junction diode.
S
âââ âââ 1.5
âââ 530 800
âââ 3.0 4.4
V TJ = 25°C, IS = 9.2A, VGS = 0V Â
ns TJ = 25°C, IF = 9.2A
µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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