IRFI530N Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFI530N
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
100 ––– ––– V V_GS = 0V, I_D = 250µA
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, I_D = 1mA†
R_DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.11 Ω V_GS = 10V, I_D = 6.6A „
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
g_fs
Forward Transconductance
6.4 ––– ––– S V_DS = 50V, I_D = 9.0A†
I_DSS
Drain-to-Source Leakage Current
––– ––– 25 _µA V_DS = 100V, V_GS = 0V
––– ––– 250
V_DS = 80V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 _nA V_GS = 20V
––– ––– -100
V_GS = -20V
Q_g
Total Gate Charge
––– ––– 44
I_D = 9.0A
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
––– ––– 6.2
––– ––– 21
nC V_DS = 80V
V_GS = 10V, See Fig. 6 and 13 „†
t_d(on)
Turn-On Delay Time
––– 6.4 –––
V_DD = 50V
t_r
t_d(off)
Rise Time
Turn-Off Delay Time
–––
–––
27 –––
37 –––
ns
I_D = 9.0A
R_G = 12Ω
t_f
Fall Time
––– 25 –––
R_D = 5.5Ω, See Fig. 10 „†
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
––– _4.5 –––
––– _{7.5 –––}
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
D
G
S
C_iss
Input Capacitance
––– 640 –––
V_GS = 0V
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
––– 160 –––
––– 88 –––
pF ^{VDS = 25V}
ƒ = 1.0MHz, See Fig. 5†
C
Drain to Sink Capacitance
––– 12 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) †
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– 12
––– ––– 60
MOSFET symbol
A ^{showing the}
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.3 V T_J = 25°C, I_S = 6.6A, V_GS = 0V „
––– 130 190 ns T_J = 25°C, I_F = 9.0A
––– 650 970 nC di/dt = 100A/µs „†
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD = 15V, starting T_J = 25°C, L = 3.1mH
R_G = 25Ω, I_AS = 9.0A. (See Figure 12)
ƒ I_SD ≤ 9.0A, di/dt ≤ 520A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… t=60s, ƒ=60Hz
† Uses IRF530N data and test conditions