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IRFI3205PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY | |||
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IRFI3205PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
C
Drain to Sink Capacitance
Min. Typ. Max.
55 ÂÂÂ ÂÂÂ
ÂÂÂ 0.057 ÂÂÂ
ÂÂÂ ÂÂÂ 0.008
2.0 ÂÂÂ 4.0
42 ÂÂÂ ÂÂÂ
ÂÂÂ ÂÂÂ 25
ÂÂÂ ÂÂÂ 250
ÂÂÂ ÂÂÂ 100
ÂÂÂ ÂÂÂ -100
ÂÂÂ ÂÂÂ 170
ÂÂÂ ÂÂÂ 32
ÂÂÂ ÂÂÂ 74
ÂÂÂ 14 ÂÂÂ
ÂÂÂ 100 ÂÂÂ
ÂÂÂ 43 ÂÂÂ
ÂÂÂ 70 ÂÂÂ
ÂÂÂ 4.5 ÂÂÂ
ÂÂÂ 7.5 ÂÂÂ
ÂÂÂ 4000 ÂÂÂ
ÂÂÂ 1300 ÂÂÂ
ÂÂÂ 480 ÂÂÂ
ÂÂÂ 12 ÂÂÂ
Units
V
V/°C
â¦
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mAÂ
VGS = 10V, ID = 34A Â
VDS = VGS, ID = 250µA
VDS = 25V, ID = 59AÂ
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 59A
VDS = 44V
VGS = 10V, See Fig. 6 and 13 ÂÂ
VDD = 28V
ID = 59A
RG = 2.5â¦
RD = 0.39â¦, See Fig. 10 ÂÂ
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
 = 1.0MHz, See Fig. 5Â
 = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ÂÂ
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
ÂÂÂ ÂÂÂ 64
A showing the
integral reverse
G
ÂÂÂ ÂÂÂ 390
p-n junction diode.
S
ÂÂÂ ÂÂÂ 1.3
ÂÂÂ 110 170
ÂÂÂ 450 680
V TJ = 25°C, IS = 34A, VGS = 0V Â
ns TJ = 25°C, IF = 59A
nC di/dt = 100A/µs ÂÂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Pulse width ⤠300µs; duty cycle ⤠2%.
 VDD = 25V, starting TJ = 25°C, L = 190µH
RG = 25â¦, IAS = 59A. (See Figure 12)
Â
t=60s, Â=60Hz
 ISD ⤠59A, di/dt ⤠290A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Uses IRF3205 data and test conditions
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