|
IRFI1010NPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET® Power MOSFET | |||
|
◁ |
IRFI1010NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
C
Drain to Sink Capacitance
Min.
55
ÂÂÂ
ÂÂÂ
2.0
30
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
Typ. Max.
ÂÂÂ ÂÂÂ
0.06 ÂÂÂ
ÂÂÂ 0.012
ÂÂÂ 4.0
ÂÂÂ ÂÂÂ
ÂÂÂ 25
ÂÂÂ 250
ÂÂÂ 100
ÂÂÂ -100
ÂÂÂ 130
ÂÂÂ 23
ÂÂÂ 53
11 ÂÂÂ
66 ÂÂÂ
40 ÂÂÂ
46 ÂÂÂ
4.5 ÂÂÂ
7.5 ÂÂÂ
2900 ÂÂÂ
880 ÂÂÂ
330 ÂÂÂ
12 ÂÂÂ
Units
V
V/°C
â¦
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mAÂ
VGS = 10V, ID = 26A Â
VDS = VGS, ID = 250µA
VDS = 25V, ID = 43AÂ
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 43A
VDS = 44V
VGS = 10V, See Fig. 6 and 13 ÂÂ
VDD = 28V
ID = 43A
RG = 3.6â¦
RD = 0.62â¦, See Fig. 10 ÂÂ
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
 = 1.0MHz, See Fig. 5Â
 = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ÂÂ
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
ÂÂÂ ÂÂÂ 49
showing the
A integral reverse
G
ÂÂÂ ÂÂÂ 290
p-n junction diode.
S
  1.3 V TJ = 25°C, IS = 26A, VGS = 0V Â
 81 120 ns TJ = 25°C, IF = 43A
 240 370 nC di/dt = 100A/µs ÂÂ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 VDD = 25V, starting TJ = 25°C, L = 390µH
RG = 25â¦, IAS = 43A. (See Figure 12)
 ISD ⤠43A, di/dt ⤠260A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
t=60s, Â=60Hz
 Uses IRF1010N data and test conditions
|
▷ |