IRFH8324PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET

Power MOSFET

IRFH8324PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)
I_DSS
I_GSS
gfs
Q_g
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
72
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.019
3.3
5.0
1.8
-6.2
–––
–––
–––
–––
–––
31
14
4.4
2.2
3.5
3.9
5.7
13
1.1
13
26
14
8.5
2380
500
205
–––
–––
4.1
6.3
2.35
–––
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V VGS = 0V, ID = 250µA
V/°C
ee _mΩ
Reference to 25°C, I_D = 1.0mA
V_GS = 10V, I_D = 20A
V_GS = 4.5V, I_D = 16A
V V_DS = V_GS, I_D = 50µA
mV/°C
µA VDS = 24V, VGS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
nA ^{VGS = 20V}
V_GS = -20V
S V_DS = 10V, I_D = 20A
nC V_GS = 10V, V_DS = 15V, I_D = 20A
V_DS = 15V
nC ^{VGS = 4.5V}
I_D = 20A
nC V_DS = 16V, V_GS = 0V
Ω
V_DD = 15V, V_GS = 4.5V
ns ^{ID = 20A}
R_G=1.8Ω
V_GS = 0V
pF V_DS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
E_AS
I_AR
d ^Parameter
Single Pulse Avalanche Energy
™ Avalanche Current
Typ.
–––
–––
Max.
94
20
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
i ––– ––– 50
––– ––– 200
––– ––– 1.0
––– 16
24
––– 25
38
MOSFET symbol
D
A ^{showing the}
integral reverse
G
p-n junction diode.
S
e V T_J = 25°C, I_S = 20A, V_GS = 0V
eà ^{ns TJ = 25°C, IF = 20A, VDD = 15V}
nC di/dt = 360 A/µs
Time is dominated by parasitic Inductance
Thermal Resistance
R_θJC (Bottom)
R_θJC (Top)
R_θJA
R_θJA (<10s)
f Junction-to-Case
Parameter
f Junction-to-Case
g Junction-to-Ambient
g Junction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
2.3
32
35
23
Units
°C/W
2
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January 21, 2014