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IRFH8303PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – Compatible with Existing Surface Mount Techniques
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IRFH8303PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy 
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Thermal Resistance
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case 
Junction-to-Case 
Junction-to-Ambient 
Junction-to-Ambient 
Min.
30
–––
–––
–––
1.2
–––
–––
–––
–––
–––
158
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
0.90
1.30
1.7
-5.7
–––
–––
–––
–––
–––
119
58
14
8
19
17
27
33
1.0
21
91
48
65
7736
1363
743
Max.
–––
–––
1.10
1.70
2.2
–––
1.0
150
100
-100
–––
179
87
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1.0mA
m
VGS = 10V, ID = 50A 
VGS = 4.5V, ID = 50A 
V VDS = VGS, ID = 150µA
mV/°C
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20 V
VGS = -20 V
S VDS = 15 V, ID = 50A
VGS = 10V, VDS = 15V, ID = 50A
VDS = 15V
nC VGS = 4.5V
ID = 50A
nC VDS = 16V, VGS = 0V

VDD = 30V, VGS = 4.5V
ns ID = 50A
RG = 1.8
VGS = 0V
pF VDS = 24V
ƒ = 1.0MHz
Typ.
–––
Max.
355
Units
mJ
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
33
51
Max.
100
400
1.0
50
77
Units
Conditions
A MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS=50A, VGS=0V 
ns TJ = 25°C, IF = 50A, VDD = 15V
nC di/dt = 200A/µs 
Typ.
–––
–––
–––
–––
Max.
0.8
21
34
21
Units
°C/W
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March 17, 2015
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