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| IRFH7932TRPBF Datasheet, PDF (2/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power | |||
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IRFH7932PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30
âââ
âââ
âââ
1.35
âââ
âââ
0.021
2.5
3.3
1.8
-5.9
âââ
âââ
3.3
3.9
2.35
âââ
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
ee mâ¦
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 20A
V
mV/°C VDS = VGS, ID = 100µA
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
59 âââ âââ
âââ 34 51
S VDS = 15V, ID = 20A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 7.9 âââ
VDS = 15V
âââ 3.6 âââ nC VGS = 4.5V
âââ 11 âââ
ID = 20A
âââ 12 âââ
See Fig.17 & 18
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 15 âââ
Qoss
Output Charge
âââ 19 âââ nC VDS = 16V, VGS = 0V
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
âââ 0.7 âââ â¦
âââ 20 âââ
VDD = 15V, VGS = 4.5V
âââ
âââ
48
23
âââ
âââ
ns
ID = 20A
RG=1.8â¦
âââ 20 âââ
See Fig.15
Ciss
Input Capacitance
âââ 4270 âââ
VGS = 0V
Coss
Output Capacitance
âââ 830 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 420 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
14
20
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 3.9
âââ âââ 200
âââ âââ 1.0
âââ 21 32
âââ 33 50
MOSFET symbol
D
A showing the
integral reverse
G
e p-n junction diode.
S
V TJ = 25°C, IS = 20A, VGS = 0V
eà ns TJ = 25°C, IF = 20A, VDD = 15V
nC di/dt = 300A/µs See Fig.16
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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