IRFH5206PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFH5206PbF
Static @ T_J = 25°C (unless otherwise specified)
BV_DSS
ΔΒV_DSS/ΔT_J
R_DS(on)
V_GS(th)
ΔV_GS(th)
I_DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
I_GSS
gfs
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
60
–––
–––
2.0
–––
–––
–––
–––
–––
73
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.07
5.6
–––
-9.7
–––
–––
–––
–––
–––
40
6.2
3.4
12
18.4
15.4
14
1.7
6.4
11
22
8.2
2490
360
160
Max. Units
Conditions
––– V V_GS = 0V, I_D = 250μA
e ^{––– V/°C Reference to 25°C, ID = 1mA}
6.7 mΩ V_GS = 10V, I_D = 50A
4.0 V
––– mV/°C ^{VDS = VGS, ID = 100μA}
20
250
100
-100
–––
60
μA ^{VDS = 60V, VGS = 0V}
V_DS = 60V, V_GS = 0V, T_J = 125°C
nA ^{VGS = 20V}
V_GS = -20V
S V_DS = 25V, I_D = 50A
–––
V_DS = 30V
––– _nC V_GS = 10V
–––
I_D = 50A
–––
See Fig.17 & 18
–––
––– nC V_DS = 16V, V_GS = 0V
––– Ω
–––
V_DD = 30V, V_GS = 10V
––– _ns I_D = 50A
–––
R_G=1.8Ω
–––
See Fig.15
–––
V_GS = 0V
––– pF V_DS = 25V
–––
ƒ = 1.0MHz
Avalanche Characteristics
E_AS
I_AR
d ^Parameter
Single Pulse Avalanche Energy
™ Avalanche Current
Typ.
–––
–––
Max.
87
50
Units
mJ
A
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 89
––– ––– 350
––– ––– 1.3
––– 26 39
––– 110 165
MOSFET symbol
A ^{showing the}
integral reverse
D
G
p-n junction diode.
S
e V T_J = 25°C, I_S = 50A, V_GS = 0V
eà ^{ns TJ = 25°C, IF = 50A, VDD = 30V}
nC di/dt = 500A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
R_θJC (Bottom)
R_θJC (Top)
R_θJA
R_θJA (<10s)
2
f ^Parameter
Junction-to-Case
f Junction-to-Case
g Junction-to-Ambient
g Junction-to-Ambient
Typ.
Max.
Units
–––
1.2
–––
15
°C/W
–––
35
–––
22
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