IRFE310 Datasheet, PDF (2/7 Pages) International Rectifier – HEXFET TRANSISTOR

IRFE310, JANTX-, JANTXV-, 2N6786U Devices
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage 400
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
2.0
gfs
Forward Transconductance
0.87
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td_(on)
tr
td_(off)
tf
LD
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Total Gate Charge
—
Gate-to-Source Charge
—
Gate-to-Drain (‘Miller’) Charge
—
Turn-On Delay Time
—
Rise Time
—
Turn-Off Delay Time
—
Fall Time
—
Internal Drain Inductance
—
LS
Internal Source Inductance
—
Ciss
Input Capacitance
—
Coss
Output Capacitance
—
Crss
Reverse Transfer Capacitance
—
Typ Max Units
—— V
0.37 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 3.6
VGS = 10V, ID = 0.8A _„
— 3.7
VGS = 10V, ID = 1.25A
— 4.0 V
VDS = VGS, ID = 250µA
— — S( )
VDS > 15V, IDS = 0.8A „
—
—
25
250
µA
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
— 100
— -100 ^nA
VGS = 20V
VGS = -20V
— 8.4
VGS = 10V, ID = 1.25A
— 1.6 nC
VDS = Max Rating x 0.5
— 5.0
— 15
— 20
— 35 ^ns
VDD = 15V, ID = 1.25A,
RG = 7.5Ω
— 30
5.0 —
15 —
nH
Measured from drain _{Modified MOSFET} sym-
lead, 6mm (0.25 in) bol showing the internal
from package to center inductances.
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
190 —
65 — pF
VGS = 0V, VDS = 25V
f = 1.0MHz
24 —
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode) — — 1.25 _{A Modified MOSFET symbol}
ISM Pulse Source Current (Body Diode) 
— — 5.5
showing the integral reverse
p-n junction rectifier.
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.4 V
Tj = 25°C, IS = 1.25A, VGS = 0V „
— — 540 ns Tj = 25°C, IF = 1.25A, di/dt ≤ 100A/µs
— — 4.5 µC
VDD ≤ 50V „
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
Test Conditions
— — 8.3
— — 27 ^°C/W soldered to a copper-clad PC board
2
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