IRFBC30AS Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

IRFBC30AS/L
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage 600
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––
R_DS(on)
Static Drain-to-Source On-Resistance –––
––– –––
0.67 –––
––– 2.2
V
V/°C
Ω
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA†
V_GS = 10V, I_D = 2.2A „
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.5 V
I_DSS
Drain-to-Source Leakage Current
––– ––– 25 _µA
––– ––– 250
Gate-to-Source Forward Leakage
––– ––– 100
I_GSS
Gate-to-Source Reverse Leakage
nA
––– ––– -100
Dynamic @ T_J = 25°C (unless otherwise specified)
V_DS = V_GS, I_D = 250µA
V_DS = 600V, V_GS = 0V
V_DS = 480V, V_GS = 0V, T_J = 125°C
V_GS = 30V
V_GS = -30V
Parameter
Min. Typ. Max. Units
Conditions
g_fs
Forward Transconductance
2.1 ––– ––– S V_DS = 50V, I_D = 2.2A
Q_g
Q_gs
Q_gd
t_d(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– ––– 23
––– ––– 5.4
––– ––– 11
––– 9.8 –––
I_D = 3.6A
nC V_DS = 480V
V_GS = 10V, See Fig. 6 and 13 „
V_DD = 300V
t_r
t_d(off)
t_f
C_iss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
––– 13 ––– _ns I_D = 3.6A
––– 19 –––
R_G = 12Ω
––– 12 –––
R_D = 82Ω,See Fig. 10 „
––– 510 –––
V_GS = 0V
C_oss
Output Capacitance
––– 70 –––
V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 3.5 ––– pF ƒ = 1.0MHz, See Fig. 5
C_oss
C_oss
C_oss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 730 –––
––– 19 –––
––– 31 –––
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 480V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 480V …
Avalanche Characteristics
Parameter
E_AS
Single Pulse Avalanche Energy‚
I_AR
Avalanche Current
E_AR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
290
3.6
7.4
Units
mJ
A
mJ
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Typ.
–––
–––
Max.
1.7
40
Units
°C/W
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 3.6
A ^{showing the}
integral reverse
G
––– ––– 14
p-n junction diode.
S
––– ––– 1.6 V T_J = 25°C, I_S = 3.6A, V_GS = 0V „
––– 400 600 ns T_J = 25°C, I_F = 3.6A
––– 1.1 1.7 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
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