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| IRFB9N65APBF Datasheet, PDF (2/8 Pages) International Rectifier – SMPS MOSFET | |||
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IRFB9N65APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
650 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.67 âââ V/°C Reference to 25°C, ID = 1mAÂ
âââ âââ 0.93 ⦠VGS = 10V, ID = 5.1.A Â
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
âââ âââ 25
âââ âââ 250
µA VDS = 650V, VGS = 0V
VDS = 520V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
3.9 âââ âââ S VDS = 50V, ID = 3.1AÂ
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ âââ 48
ID = 5.2A
âââ âââ 12 nC VDS = 400V
âââ âââ 19
VGS = 10V, See Fig. 6 and 13 ÂÂ
âââ 14 âââ
VDD = 325V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
âââ 20 âââ ns ID = 5.2A
âââ 34 âââ
RG = 9.1â¦
âââ 18 âââ
RD = 62â¦,See Fig. 10 ÂÂ
âââ 1417 âââ
VGS = 0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
âââ 177 âââ
VDS = 25V
âââ 7.0 âââ pF Æ = 1.0MHz, See Fig. 5Â
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 1912 âââ
âââ 48 âââ
âââ 84 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 520V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 520V Â
Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
325
5.2
16
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
Diode Characteristics
âââ
0.50
âââ
0.75
âââ
°C/W
62
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 5.2
A showing the
integral reverse
G
âââ âââ 21
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
âââ âââ 1.5 V TJ = 25°C, IS = 5.2A, VGS = 0V Â
âââ 493 739 ns TJ = 25°C, IF = 5.2A
âââ 2.1 3.2 µC di/dt = 100A/µs ÂÂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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