IRFB812PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – ZERO VOLTAGE SWITCHING SMPS

IRFB812PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
500 ––– –––
––– 0.37 –––
––– 1.75 2.2
V_GS(th)
Gate Threshold Voltage
3.0 ––– 5.0
I_DSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 2.0
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100
Gate-to-Source Reverse Leakage
––– ––– -100
Dynamic @ T_J = 25°C (unless otherwise specified)
V V_GS = 0V, I_D = 250μA
f V/°C Reference to 25°C, ID = 250μA
Ω VGS = 10V, ID = 2.2A
V V_DS = V_GS, I_D = 250μA
μA V_DS = 500V, V_GS = 0V
mA V_DS = 400V, V_GS = 0V, T_J = 125°C
nA V_GS = 20V
V_GS = -20V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
C_oss
Output Capacitance
C_oss
Output Capacitance
C_oss eff.
Effective Output Capacitance
C_oss eff. (ER) Effective Output Capacitance
(Energy Related)
Avalanche Characteristics
7.6 ––– ––– S V_DS = 50V, I_D = 2.2A
––– ––– 20
I_D = 3.6A
––– –––
––– –––
7.3
7.1
f nC VDS = 400V
V_GS = 10V, See Fig.14a &14b
––– 14 –––
V_DD = 250V
––– 22 ––– ns I_D = 3.6A
––– 24 –––
––– 17 –––
f ^{RG = 17Ω}
V_GS = 10V, See Fig. 15a & 15b
––– 810 –––
V_GS = 0V
––– 47 –––
V_DS = 25V
––– 7.3 –––
ƒ = 1.0MHz, See Fig. 5
––– 610 ––– pF V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
––– 16 –––
––– 5.9 –––
g ^{VGS = 0V, VDS = 400V, ƒ = 1.0MHz}
V_GS = 0V,V_DS = 0V to 400V
––– 37 –––
Symbol
E_AS
I_AR
E_AR
Parameter
d Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
150
1.8
7.8
Units
mJ
A
mJ
Symbol
R_θJC
R_θCS
R_θJA
Parameter
h Junction-to-Case
Case-to-Sink, Flat, Greased Surface
h Junction-to-Ambient
Typ.
–––
0.5
–––
Max.
1.6
–––
62
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting T_J = 25°C, L = 93mH, R_G = 25Ω,
I_AS = 1.8A. (See Figure 13).
ƒ I_SD = 3.6A, di/dt ≤ 520A/μs, V_DDV_(BR)DSS,
T_J ≤ 150°C.
2
„ Pulse width ≤ 300μs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
C_oss eff.(ER) is a fixed capacitance that stores the same energy
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† R_θ is measured at T_J approximately 90°C
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