IRFB7446PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Brushed Motor drive applications

IRFB7446PbF
Absolute Maximum Rating
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
V_GS
T_J
T_STG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
E_AS
Single Pulse Avalanche Energy 
E_{AS (L=1mH)}
Single Pulse Avalanche Energy 
I_AR
Avalanche Current 
E_AR
Repetitive Avalanche Energy 
Thermal Resistance
Symbol
Parameter
R_JC
R_CS
Junction-to-Case 
Case-to-Sink, Flat Greased Surface
R_JA
Junction-to-Ambient 
Max.
123
87
120
492
99
0.66
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
111
236
See Fig 15, 16, 23a, 23b
Typ.
–––
0.50
–––
Max.
1.52
–––
62
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
V_(BR)DSS/T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Gate Resistance
Min.
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.033 –––
2.6 3.3
3.9 –––
3.0 3.9
––– 1.0
––– 150
––– 100
––– -100
1.6 –––
Units
V
V/°C
m
V
µA
nA

Conditions
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 5mA 
V_GS = 10V, I_D = 70A 
V_GS = 6.0V, I_D = 35A 
V_DS = V_GS, I_D = 100µA
V_DS =40 V, V_GS = 0V
V_DS =40V,V_GS = 0V,T_J =125°C
V_GS = 20V
V_GS = -20V
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
 Repetitive rating; pulse width limited by max. junction temperature.
Limited by T_Jmax, starting T_J = 25°C, L = 0.046mH,R_G = 50, I_AS = 70A, V_GS =10V.
 I_SD  70A, di/dt  1174A/µs, V_DD  V_(BR)DSS, T_J  175°C.
 Pulse width  400µs; duty cycle  2%.
 C_oss eff. (TR) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80% V_DSS.
 C_oss eff. (ER) is a fixed capacitance that gives the same energy as C_oss while VDS is rising from 0 to 80% V_DSS.
 R_ is measured at T_J approximately 90°C.
 This value determined from sample failure population, starting T_J = 25°C, L= 1mH, R_G = 50, I_AS = 22A, V_GS =10V.
* Halogen -Free since April 30, 2014
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November 7, 2014