IRFB7434PBF Datasheet, PDF (2/10 Pages) International Rectifier – Brushed Motor drive applications

IRFB7434PbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Wire Bond Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
E_AS (tested)
I_AR
E_AR
e Single Pulse Avalanche Energy
k Single Pulse Avalanche Energy Tested Value
Ãd Avalanche Current
d Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
j Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface
R_θJA
Junction-to-Ambient
Max.
317™
224™
195
1270
294
1.96
± 20
-55 to + 175
300
x x 10lbf in (1.1N m)
490
800
See Fig. 14, 15 , 22a, 22b
Typ.
–––
0.50
–––
Max.
0.51
–––
62
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V_GS(th)
I_DSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Internal Gate Resistance
Min. Typ. Max. Units
Conditions
40 ––– –––
––– 0.032 –––
––– 1.25 1.6
1.8 –––
V V_GS = 0V, I_D = 250μA
d V/°C Reference to 25°C, I_D = 5mA
g mΩ V_GS = 10V, I_D = 100A
g mΩ V_GS = 6.0V, I_D = 50A
2.2 3.0 3.9 V V_DS = V_GS, I_D = 250μA
––– ––– 1.0
––– ––– 150
μA ^{VDS = 40V, VGS = 0V}
V_DS = 40V, V_GS = 0V, T_J = 125°C
––– ––– 100 _nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– 2.1 ––– Ω
Notes:
 Calculated continuous current based on maximum allowable junction … Pulse width ≤ 400μs; duty cycle ≤ 2%.
temperature. Bond wire current limit is 195A. Note that current
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.099mH
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_θ is measured at T_J approximately 90°C.
‰ This value determined from sample failure population,
R_G = 50Ω, I_AS = 100A, V_GS =10V.
„ I_SD ≤ 100A, di/dt ≤ 1307A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
starting T_J = 25°C, L=0.099mH, R_G = 50Ω, I_AS = 100A, V_GS =10V.
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