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| IRFB61N15DPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFB61N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150 âââ âââ V
âââ 0.18 âââ V/°C
âââ âââ 0.032 â¦
3.0 âââ 5.5 V
âââ âââ 25 µA
âââ âââ 250
âââ âââ 100
nA
âââ âââ -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 36A Â
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
22 âââ âââ S VDS = 50V, ID = 37A
âââ 95 140
ID = 37A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ 26 39
âââ 45 68
nC VDS = 120V
VGS = 10V,
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
âââ 18 âââ
VDD = 75V
âââ 110 âââ ns ID = 37A
âââ 28 âââ
RG = 1.8â¦
âââ 51 âââ
VGS = 10V Â
Ciss
Input Capacitance
Coss
Output Capacitance
âââ 3470 âââ
âââ 690 âââ
VGS = 0V
VDS = 25V
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
âââ 150 âââ
âââ 4600 âââ
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
âââ 310 âââ
âââ 580 âââ
VGS = 0V, VDS = 120V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 120V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
520
37
33
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 60
A showing the
âââ âââ 250
integral reverse
G
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 37A, VGS = 0V Â
âââ 180 270 ns TJ = 25°C, IF = 37A
âââ 1340 2010 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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