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| IRFB59N10DPBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFB/IRFS/IRFSL59N10DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
100 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.11 âââ V/°C Reference to 25°C, ID = 1mA
âââ âââ 0.025 ⦠VGS = 10V, ID = 35.4A Â
3.0 âââ 5.5 V VDS = VGS, ID = 250µA
âââ âââ 25
âââ âââ 250
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
18 âââ âââ
Qg
Total Gate Charge
âââ 76 114
Qgs
Gate-to-Source Charge
âââ 24 36
Qgd
Gate-to-Drain ("Miller") Charge
âââ 36 54
td(on)
Turn-On Delay Time
âââ 16 âââ
tr
Rise Time
âââ 90 âââ
td(off)
Turn-Off Delay Time
âââ 20 âââ
tf
Fall Time
âââ 12 âââ
Ciss
Input Capacitance
âââ 2450 âââ
Coss
Output Capacitance
âââ 740 âââ
Crss
Reverse Transfer Capacitance
âââ 190 âââ
Coss
Output Capacitance
âââ 3370 âââ
Coss
Output Capacitance
âââ 390 âââ
Coss eff. Effective Output Capacitance
Avalanche Characteristics
âââ 690 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 35.4A
ID = 35.4A
VDS = 80V
VGS = 10V, Â
VDD = 50V
ID = 35.4A
RG = 2.5â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
Æ = 1.0MHzÂ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 80V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
510
35.4
20
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface Â
RθJA
Junction-to-AmbientÂ
RθJA
Junction-to-AmbientÂ
Diode Characteristics
âââ
0.75
0.50
âââ
°C/W
âââ
62
âââ
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 59
A showing the
âââ âââ 236
integral reverse
G
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
âââ âââ 1.3 V TJ = 25°C, IS = 35.4A, VGS = 0V Â
âââ 130 200 ns TJ = 25°C, IF = 35.4A
âââ 0.75 1.1 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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