IRFB5620PBF_15 Datasheet, PDF (2/7 Pages) International Rectifier – Key Parameters Optimized for Class-D Audio Amplifier Applications

IRFB5620PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
200 ––– ––– V V_GS = 0V, I_D = 250µA
e ^{––– 0.22 ––– V/°C Reference to 25°C, ID = 1mA}
––– 60 72.5 ^mΩ V_GS = 10V, I_D = 15A
3.0 ––– 5.0
V V_DS = V_GS, I_D = 100µA
––– -14 ––– mV/°C
I_DSS
Drain-to-Source Leakage Current
––– ––– 20
µA ^{VDS = 200V, VGS = 0V}
––– ––– 250
V_DS = 200V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 _nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
g_fs
Forward Transconductance
37 ––– ––– S V_DS = 50V, I_D = 15A
Q_g
Total Gate Charge
––– 25 38
Q_gs1
Q_gs2
Q_gd
Q_godr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 6.3 –––
V_DS = 100V
––– 1.9 ––– _nC V_GS = 10V
––– 7.9 –––
I_D = 15A
––– 9.3 –––
See Fig. 6 and 19
Q_sw
R_G(int)
t_d(on)
t_r
t_d(off)
t_f
Switch Charge (Q_gs2 + Q_gd)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 9.8 –––
––– 2.6 5.0
––– 8.6 –––
––– 14.6 –––
––– 17.1 –––
––– 9.9 –––
Ω
Ãe V_DD = 100V, V_GS = 10V
ns ^{ID = 15A}
R_G = 2.4Ω
C_iss
Input Capacitance
––– 1710 –––
V_GS = 0V
C_oss
Output Capacitance
––– 125 ––– _pF V_DS = 50V
C_rss
Reverse Transfer Capacitance
––– 30 –––
ƒ = 1.0MHz,
See Fig.5
C_oss
Effective Output Capacitance
––– 138 –––
V_GS = 0V, V_DS = 0V to 160V
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
––– 4.5 –––
Between lead,
D
nH ^{6mm (0.25in.)}
from package
G
––– 7.5 –––
and center of die contact
S
Avalanche Characteristics
E_AS
I_AR
E_AR
d ^Parameter
Single Pulse Avalanche Energy
Ãg Avalanche Current
g Repetitive Avalanche Energy
Typ.
Max.
–––
113
See Fig. 14, 15, 17a, 17b
Units
mJ
A
mJ
Diode Characteristics
Parameter
I_S @ T_C = 25°C Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
98
491
Max. Units
Conditions
MOSFET symbol
25
showing the
A
integral reverse
100
p-n junction diode.
1.3
e V T_J = 25°C, I_S = 15A, V_GS = 0V
147
737
e ^{ns TJ = 25°C, IF = 15A , VR = 160V}
nC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting T_J = 25°C, L = 1.00mH, R_G = 25Ω, I_AS = 15A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
„ R_θ is measured at T_J of approximately 90°C.
… Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
www.irf.com