IRFB4615PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB4615PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V_(BR)DSS
Drain-to-Source Breakdown Voltage
150
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
–––
R_DS(on)
Static Drain-to-Source On-Resistance
–––
V_GS(th)
Gate Threshold Voltage
3.0
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
R_G(int)
Internal Gate Resistance
–––
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
35
Q_g
Total Gate Charge
–––
Q_gs
Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain ("Miller") Charge
–––
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
hà ^Coss ^{eff. (ER)} Effective Output Capacitance (Energy Related) –––
g ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related)
–––
Typ.
–––
0.19
32
–––
–––
–––
–––
–––
2.7
Typ.
–––
26
8.6
9.0
17
15
35
25
20
1750
155
40
179
382
Max. Units
Conditions
–––
–––
39
V V_GS = 0V, I_D = 250µA
™ V/°C Reference to 25°C, I_D = 5mA
f _mΩ V_GS = 10V, I_D = 21A
5.0 V V_DS = V_GS, I_D = 100µA
20
250
µA
V_DS = 150V, V_GS = 0V
V_DS = 150V, V_GS = 0V, T_J = 125°C
100
-100
nA
V_GS = 20V
V_GS = -20V
––– Ω
Max. Units
Conditions
––– S V_DS = 50V, I_D = 21A
I_D = 21A
f ^{––– nC VDS = 75V}
–––
V_GS = 10V
–––
I_D = 21A, V_DS =0V, V_GS = 10V
–––
V_DD = 98V
–––
–––
–––
ns
I_D = 21A
f ^{RG = 7.3Ω}
V_GS = 10V
–––
V_GS = 0V
–––
V_DS = 50V
––– pF ƒ = 1.0MHz (See Fig.5)
–––
–––
h V_GS = 0V, V_DS = 0V to 120V (See Fig.11)
g V_GS = 0V, V_DS = 0V to 120V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 35
A ^{showing the}
integral reverse
G
––– ––– 140
––– ––– 1.3
p-n junction diode.
f V T_J = 25°C, I_S = 21A, V_GS = 0V
S
–––
–––
70
83
–––
–––
ns
T_J = 25°C
T_J = 125°C
–––
–––
177
247
–––
–––
nC
T_J = 25°C
T_J = 125°C
V_R = 100V,
f ^{IF = 21A}
di/dt = 100A/µs
––– 4.9 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.51mH
R_G = 25Ω, I_AS = 21A, V_GS =10V. Part not recommended for use
above this value .
ƒ I_SD ≤ 21A, di/dt ≤ 549A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994
ˆ R_θ is measured at T_J approximately 90°C
2
www.irf.com