IRFB4610PBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET

IRF/B/S/SL4610PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Gate Input Resistance
Min. Typ. Max. Units
Conditions
100 –––
––– 0.085
––– 11
–––
–––
14
V V_GS = 0V, I_D = 250µA
™ V/°C Reference to 25°C, I_D = 1mA
f mΩ V_GS = 10V, I_D = 44A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 100µA
––– ––– 20 µA V_DS = 100V, V_GS = 0V
––– ––– 250
V_DS = 100V, V_GS = 0V, T_J = 125°C
––– ––– 200 nA V_GS = 20V
––– ––– -200
V_GS = -20V
––– 1.5 ––– Ω f = 1MHz, open drain
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
73 ––– –––
Q_g
Total Gate Charge
––– 90 140
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
––– 20 –––
––– 36 –––
––– 18 –––
––– 87 –––
––– 53 –––
t_f
Fall Time
––– 70 –––
C_iss
Input Capacitance
––– 3550 –––
C_oss
Output Capacitance
––– 260 –––
C_rss
Reverse Transfer Capacitance
––– 150 –––
C_oss eff. (ER) _{Effective Output Capacitance (Energy Related)} ––– 330 –––
C_oss eff. (TR) _{Effective Output Capacitance (Time Related)} ––– 380 –––
S V_DS = 50V, I_D = 44A
nC I_D = 44A
f ^{VDS = 80V}
V_GS = 10V
ns V_DD = 65V
I_D = 44A
f ^{RG = 5.6Ω}
V_GS = 10V
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz
h V_GS = 0V, V_DS = 0V to 80V , See Fig.11
g V_GS = 0V, V_DS = 0V to 80V , See Fig. 5
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 73 A MOSFET symbol
D
showing the
––– ––– 290
integral reverse
G
––– ––– 1.3
f ^{p-n junction diode.}
V T_J = 25°C, I_S = 44A, V_GS = 0V
S
––– 35 53 ns T_J = 25°C
V_R = 85V,
––– 42 63
T_J = 125°C
––– 44 66 nC T_J = 25°C
f ^{IF = 44A}
di/dt = 100A/µs
––– 65 98
T_J = 125°C
––– 2.1 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.39mH
R_G = 25Ω, I_AS = 44A, V_GS =10V. Part not recommended for use
above this value.
ƒ I_SD ≤ 44A, di/dt ≤ 660A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ R_θ is measured at T_J approximately 90°C
2
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