IRFB4510GPBF Datasheet, PDF (2/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB4510GPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV_(BR)DSS/ΔT_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Internal Gate Resistance
100
–––
–––
–––
0.11
10.7
–––
–––
13.5
V V_GS = 0V, I_D = 250μA
™ V/°C Reference to 25°C, I_D = 5mA
f mΩ V_GS = 10V, I_D = 37A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 100μA
––– ––– 20 μA V_DS = 100V, V_GS = 0V
––– ––– 250
V_DS = 80V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– 0.6 ––– Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
100 ––– –––
Q_g
Total Gate Charge
––– 58 87
Q_gs
Gate-to-Source Charge
––– 14 –––
Q_gd
Gate-to-Drain ("Miller") Charge
––– 18
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
––– 40 –––
t_d(on)
Turn-On Delay Time
––– 13 –––
t_r
Rise Time
––– 32 –––
t_d(off)
Turn-Off Delay Time
––– 28 –––
t_f
Fall Time
––– 28 –––
C_iss
Input Capacitance
––– 3180 –––
C_oss
Output Capacitance
––– 220 –––
C_rss
Reverse Transfer Capacitance
–––
h Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
g Coss eff. (TR) Effective Output Capacitance (Time Related) –––
120
260
325
–––
–––
–––
S V_DS = 25V, I_D = 37A
nC I_D = 37A
V_DS =50V
f V_GS = 10V
f I_D = 37A, V_DS =0V, V_GS = 10V
ns V_DD = 65V
I_D = 37A
f ^{RG =2.7Ω}
V_GS = 10V
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz, See Fig.5
h V_GS = 0V, V_DS = 0V to 80V , See Fig.1
gà V_GS = 0V, V_DS = 0V to 80V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 62 A MOSFET symbol
D
showing the
––– ––– 250 A integral reverse
G
––– ––– 1.3
f ^{p-n junction diode.}
V T_J = 25°C, I_S = 37A, V_GS = 0V
S
––– 54 81 ns T_J = 25°C
V_R = 85V,
––– 60 90
T_J = 125°C
––– 95 140 nC T_J = 25°C
f ^{IF = 37A}
di/dt = 100A/μs
––– 130 195
T_J = 125°C
––– 3.3 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.192mH
R_G = 25Ω, I_AS = 37A, V_GS =10V. Part not recommended for use
above this value.
ƒ I_SD ≤ 37A, di/dt ≤ 1550A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ R_θ is measured at T_J approximately 90°C.
2
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