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IRFB4228PBF Datasheet, PDF (2/8 Pages) International Rectifier – PDP SWITCH | |||
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IRFB4228PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
150 âââ âââ V VGS = 0V, ID = 250µA
âÎVDSS/âTJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
âââ 150 âââ mV/°C Reference to 25°C, ID = 1mA
âââ 12 15 m⦠VGS = 10V, ID = 33A e
VGS(th)
Gate Threshold Voltage
3.0 âââ 5.0
V VDS = VGS, ID = 250µA
âVGS(th)/âTJ
Gate Threshold Voltage Coefficient
âââ -14 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 150V, VGS = 0V
âââ âââ 1.0 mA VDS = 150V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
170 âââ âââ S VDS = 25V, ID = 50A
Qg
Total Gate Charge
âââ 72 110 nC VDD = 120V, ID = 50A, VGS = 10Ve
Qgd
Gate-to-Drain Charge
âââ 26 âââ
tst
Shoot Through Blocking Time
100 âââ âââ ns VDD = 120V, VGS = 15V, RG= 5.1â¦
EPULSE
Energy per Pulse
âââ 58 âââ
L = 220nH, C= 0.3µF, VGS = 15V
µJ VDS = 120V, RG= 5.1â¦, TJ = 25°C
âââ 110 âââ
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 120V, RG= 5.1â¦, TJ = 100°C
Ciss
Input Capacitance
âââ 4530 âââ
VGS = 0V
Coss
Output Capacitance
âââ 550 âââ pF VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 100 âââ
Æ = 1.0MHz
Coss eff.
Effective Output Capacitance
âââ 480 âââ
VGS = 0V, VDS = 0V to 120V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
nH 6mm (0.25in.)
LS
Internal Source Inductance
âââ 7.5 âââ
from package
G
and center of die contact
S
Avalanche Characteristics
Parameter
EAS
EAR
VDS(Avalanche)
IAS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltage c
Avalanche Current d
Typ.
Max.
Units
âââ
120
mJ
âââ
33
mJ
180
âââ
V
âââ
50
A
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
76
230
Max. Units
Conditions
83
MOSFET symbol
A showing the
330
integral reverse
p-n junction diode.
1.3
V TJ = 25°C, IS = 50A, VGS = 0V e
110 ns TJ = 25°C, IF = 50A, VDD = 50V
350 nC di/dt = 100A/µs e
2
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