IRFB4227PBF Datasheet, PDF (2/8 Pages) International Rectifier – PDP SWITCH

IRFB4227PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
Drain-to-Source Breakdown Voltage
200 ––– ––– V VGS = 0V, ID = 250µA
∆ΒV_DSS/∆T_J
Breakdown Voltage Temp. Coefficient ––– 170 ––– mV/°C Reference to 25°C, ID = 1mA
R_DS(on)
Static Drain-to-Source On-Resistance ––– 19.7 24 mΩ VGS = 10V, ID = 46A e
V_GS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
∆V_GS(th)/∆T_J
Gate Threshold Voltage Coefficient
––– -13 ––– mV/°C
I_DSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 200V, VGS = 0V
––– ––– 1.0 mA VDS = 200V, VGS = 0V, TJ = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
g_fs
Forward Transconductance
49 ––– ––– S VDS = 25V, ID = 46A
Q_g
Total Gate Charge
––– 70 98 nC VDD = 100V, ID = 46A, VGS = 10Ve
Q_gd
Gate-to-Drain Charge
––– 23 –––
t_st
Shoot Through Blocking Time
100 ––– ––– ns VDD = 160V, VGS = 15V, RG= 4.7Ω
E_PULSE
Energy per Pulse
––– 570 –––
L = 220nH, C= 0.4µF, V_GS = 15V
µJ VDS = 160V, RG= 4.7Ω, TJ = 25°C
––– 910 –––
L = 220nH, C= 0.4µF, V_GS = 15V
V_DS = 160V, R_G= 4.7Ω, T_J = 100°C
C_iss
Input Capacitance
––– 4600 –––
V_GS = 0V
C_oss
Output Capacitance
––– 460 ––– pF VDS = 25V
C_rss
Reverse Transfer Capacitance
––– 91 –––
ƒ = 1.0MHz,
C_oss eff.
Effective Output Capacitance
––– 360 –––
V_GS = 0V, V_DS = 0V to 160V
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
L_S
Internal Source Inductance
nH 6mm (0.25in.)
G
––– 7.5 –––
from package
and center of die contact
S
Avalanche Characteristics
Parameter
E_AS
E_AR
V_{DS(Avalanche)}
I_AS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltage c
Avalanche Current d
Diode Characteristics
Parameter
I_S @ T_C = 25°C Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) c
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Typ.
Max.
Units
–––
140
mJ
–––
33
mJ
240
–––
V
–––
39
A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
100
430
Max. Units
Conditions
65
MOSFET symbol
A showing the
260
integral reverse
p-n junction diode.
1.3
V TJ = 25°C, IS = 46A, VGS = 0V e
150 ns TJ = 25°C, IF = 46A, VDD = 50V
640 nC di/dt = 100A/µs e
2
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