IRFB41N15DPBF Datasheet, PDF(2/13 Page) International Rectifier

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IRFB41N15DPBF Datasheet, PDF (2/13 Pages) International Rectifier – HEXFET Power MOSFET

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IRFB/IRFIB/IRFS/IRFSL41N15DPbF

Static @ TJ = 25Â°C (unless otherwise specified)

V(BR)DSS

âV(BR)DSS/âTJ

RDS(on)

VGS(th)

IDSS

IGSS

Parameter

Min.

Drain-to-Source Breakdown Voltage 150

Breakdown Voltage Temp. Coefficient âââ

Static Drain-to-Source On-Resistance âââ

Gate Threshold Voltage

3.0

Drain-to-Source Leakage Current

âââ

Gate-to-Source Forward Leakage

âââ

Gate-to-Source Reverse Leakage

âââ

Typ.

âââ

0.17

âââ

Max. Units Conditions

âââ V VGS = 0V, ID = 250ÂµA

âââ V/Â°C Reference to 25Â°C, ID = 1mA

f 0.045 â¦ VGS = 10V, ID = 25A

5.5 V VDS = VGS, ID = 250ÂµA

25 ÂµA VDS = 150V, VGS = 0V

250

VDS = 120V, VGS = 0V, TJ = 150Â°C

100 nA VGS = 30V

-100

VGS = -30V

Dynamic @ TJ = 25Â°C (unless otherwise specified)

Parameter

gfs

Forward Transconductance

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Coss

Output Capacitance

Coss

Output Capacitance

Coss eff.

Effective Output Capacitance

Avalanche Characteristics

Min.

âââ

Typ.

âââ

2520

510

110

3090

230

250

Max. Units Conditions

âââ S VDS = 50V, ID = 25A

110

ID = 25A

31 nC VDS = 120V

f VGS = 10V

âââ

VDD = 75V

âââ

ID = 25A

âââ ns RG = 2.5â¦

âââ

f VGS = 10V

âââ

VGS = 0V

âââ

VDS = 25V

âââ pF Æ = 1.0MHz

âââ

VGS = 0V, VDS = 1.0V, Æ = 1.0MHz

âââ

VGS = 0V, VDS = 120V, Æ = 1.0MHz

âââ

g VGS = 0V, VDS = 0V to 120V

Parameter

EAS

d Single Pulse Avalanche Energy

IAR

ÃÂ Avalanche Current

EAR

Â Repetitive Avalanche Energy

Diode Characteristics

Typ.

âââ

Max.

470

Units

Parameter

Min. Typ. Max. Units Conditions

Continuous Source Current

âââ âââ 41

MOSFET symbol

(Body Diode)

A showing the

ISM

Pulsed Source Current

ÃÂ (Body Diode)

VSD

Diode Forward Voltage

âââ âââ 164

âââ âââ 1.3

integral reverse

p-n junction diode.

f V TJ = 25Â°C, IS = 25A, VGS = 0V

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

âââ 170 260 ns TJ = 25Â°C, IF = 25A

f âââ 1.3 1.9 ÂµC di/dt = 100A/Âµs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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