IRFB4137PBF Datasheet, PDF(2/8 Page) International Rectifier – High Efficiency Synchronous Rectification in SMPS

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IRFB4137PBF Datasheet, PDF (2/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

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IRFB4137PbF

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

ïV(BR)DSS/ïTJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

300 âââ âââ V VGS = 0V, ID = 250ÂµA

âââ 0.24 âââ V/Â°C Reference to 25Â°C, ID = 3.5mA

âââ 56 69 mïï VGS = 10V, ID = 24A ïï

VGS(th)

Gate Threshold Voltage

3.0 âââ 5.0

IDSS

Drain-to-Source Leakage Current

âââ âââ 20

âââ âââ 250

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

âââ âââ 100

âââ âââ -100

Gate Resistance

âââ 1.3 âââ

Dynamic Electrical Characteristics @ TJ = 25Â°C (unless otherwise specified)

gfs

Forward Transconductance

45 âââ âââ

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain Charge

td(on)

Turn-On Delay Time

Rise Time

âââ 83 125

âââ 28 42

âââ 26 39

âââ 18 âââ

âââ 23 âââ

td(off)

Turn-Off Delay Time

âââ 34 âââ

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

âââ 20 âââ

âââ 5168 âââ

âââ 300 âââ

âââ 77 âââ

Coss eff.(ER) Effective Output Capacitance (Energy Related) âââ 196 âââ

Coss eff.(TR) Output Capacitance (Time Related)

âââ 265 âââ

V VDS = VGS, ID = 250ÂµA

ÂµA

VDS =300 V, VGS = 0V

VDS =300V,VGS = 0V,TJ =125Â°C

VGS = 20V

VGS = -20V

ïï

S VDS = 50V, ID =24A

ID = 24A

nC VDS = 150V

VGS = 10V

VDD = 195V

ID = 24A

RG= 2.2ïï

VGS = 10V

VGS = 0V

VDS = 50V

pF Æ = 1.0MHz

VGS = 0V, VDS = 0V to 240Vï

See Fig.11

VGS = 0V, VDS = 0V to 240Vï

Diode Characteristics

Parameter

Continuous Source Current

(Body Diode)ï

ISM

Pulsed Source Current

(Body Diode)ï ïï

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IRRM

Reverse Recovery Current

Min.

âââ

Typ.

âââ

302

379

1739

2497

Max. Units

Conditions

152

MOSFET symbol

showing the

integral reverse

p-n junction diode.

1.3 V TJ = 25Â°C,IS = 24A,VGS = 0V ïï

âââ

TJ = 25Â°C

TJ = 125Â°C

VDD = 255V

IF = 24A,

âââ

TJ = 25Â°C

TJ = 125Â°C

di/dt = 100A/Âµs ïï ï

âââ A TJ = 25Â°C ï

Notes:ï

ï Repetitive rating; pulse width limited by max. junction temperature.

ï Recommended max EAS limit, starting TJ = 25Â°C, L = 1.56mH, RG = 50ï, IAS = 24A, VGS =10V.

ï ISD ï£ï 24A, di/dt ï£ï 1771A/Âµs, VDD ï£ï V(BR)DSS, TJ ï£ 175Â°C.

ï Pulse width ï£ï 400Âµs; duty cycle ï£ 2%.

ï Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

ï Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.

ï When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques

refer to application note #AN-994

ï Rï±ï is measured at TJ approximately 90Â°C

October 30, 2012

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