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| IRFB4127PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS | |||
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IRFB4127PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
ÎV(BR)DSS/ÎTJ Breakdown Voltage Temp. Coefficient
âââ
RDS(on)
Static Drain-to-Source On-Resistance
âââ
VGS(th)
Gate Threshold Voltage
3.0
IDSS
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
RG(int)
Internal Gate Resistance
âââ
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
79
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
âââ
Gate-to-Source Charge
âââ
Gate-to-Drain ("Miller") Charge
âââ
Total Gate Charge Sync. (Qg - Qgd)
âââ
Turn-On Delay Time
âââ
Rise Time
âââ
Turn-Off Delay Time
âââ
Fall Time
âââ
Input Capacitance
âââ
Output Capacitance
âââ
Reverse Transfer Capacitance
âââ
Effective Output Capacitance (Energy Related)h âââ
Effective Output Capacitance (Time Related)g âââ
Typ.
âââ
0.23
17
âââ
âââ
âââ
âââ
âââ
3.0
Typ.
âââ
100
30
31
69
17
18
56
22
5380
410
86
360
590
Max. Units
Conditions
âââ
âââ
20
5.0
20
250
100
-100
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mAc
mΩ VGS = 10V, ID = 44A f
V VDS = VGS, ID = 250μA
μA VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
âââ Ω
Max. Units
Conditions
âââ S VDS = 50V, ID = 44A
150 nC ID = 44A
âââ
VDS = 100V
âââ
VGS = 10V f
âââ
ID = 44A, VDS =0V, VGS = 10V
âââ ns VDD = 130V
âââ
ID = 44A
âââ
RG = 2.7Ω
âââ
VGS = 10V f
âââ
VGS = 0V
âââ
VDS = 50V
âââ pF Æ = 1.0MHz
âââ
VGS = 0V, VDS = 0V to 160V h
âââ
VGS = 0V, VDS = 0V to 160V g
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 76 A MOSFET symbol
D
showing the
âââ âââ 300
integral reverse
G
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 44A, VGS = 0V f
âââ 136 âââ ns TJ = 25°C
VR = 100V,
âââ 139 âââ
TJ = 125°C
âââ 458 âââ nC TJ = 25°C
IF = 44A
di/dt = 100A/μs f
âââ 688 âââ
TJ = 125°C
âââ 8.3 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.26mH
RG = 25Ω, IAS = 44A, VGS =10V. Part not recommended for use
above this value .
 ISD ⤠44A, di/dt ⤠760A/μs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
 Pulse width ⤠400μs; duty cycle ⤠2%.
Â
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C
2
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