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IRFB4115PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS | |||
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IRFB4115PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
150
âââ
âââ
âââ
0.18
9.3
âââ
âââ
11
V VGS = 0V, ID = 250µA
 V/°C Reference to 25°C, ID = 3.5mA
f m⦠VGS = 10V, ID = 62A
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
âââ âââ 20 µA VDS = 150V, VGS = 0V
âââ âââ 250
VDS = 150V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
RG
Internal Gate Resistance
âââ 2.3 âââ â¦
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
97 âââ âââ S VDS = 50V, ID = 62A
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
âââ 77 120
âââ 28 âââ
âââ 26 âââ
âââ 51 âââ
âââ 18 âââ
âââ 73 âââ
âââ 41 âââ
âââ 39 âââ
âââ 5270 âââ
nC ID = 62A
f VDS = 75V
VGS = 10V
ID = 62A, VDS =0V, VGS = 10V
ns VDD = 98V
ID = 62A
f RG = 2.2â¦
VGS = 10V
pF VGS = 0V
Coss
Output Capacitance
âââ 490 âââ
VDS = 50V
Crss
Reverse Transfer Capacitance
âââ 105 âââ
Coss eff. (ER) Effective Output Capacitance (Energy Related) âââ 460 âââ
Coss eff. (TR) Effective Output Capacitance (Time Related) âââ 530 âââ
Æ = 1.0 MHz, See Fig. 5
h VGS = 0V, VDS = 0V to 120V
g VGS = 0V, VDS = 0V to 120V
, See Fig. 11
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 104 A MOSFET symbol
D
(Body Diode)
showing the
ISM
Ãd Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
âââ âââ 420 A integral reverse
G
âââ âââ 1.3
f p-n junction diode.
V TJ = 25°C, IS = 62A, VGS = 0V
S
trr
Reverse Recovery Time
âââ 86 âââ ns TJ = 25°C
VR = 130V,
Qrr
Reverse Recovery Charge
âââ 110 âââ
TJ = 125°C
âââ 300 âââ nC TJ = 25°C
f IF = 62A
di/dt = 100A/µs
âââ 450 âââ
TJ = 125°C
IRRM
Reverse Recovery Current
âââ 6.5 âââ A TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
 Recommended max EAS limit, starting TJ = 25°C,
L = 0.17mH, RG = 25â¦, IAS = 100A, VGS =15V.
 ISD ⤠62A, di/dt ⤠1040A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C.
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November 11, 2014
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