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IRFB4020PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Key parameters optimized for Class-D audio amplifier applications | |||
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IRFB4020PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
200 âââ âââ V VGS = 0V, ID = 250µA
e âââ 0.23 âââ V/°C Reference to 25°C, ID = 1mA
âââ 80 100 m⦠VGS = 10V, ID = 11A
3.0 âââ 4.9
V VDS = VGS, ID = 100µA
âââ -13 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 200V, VGS = 0V
âââ âââ 250
VDS = 200V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
24 âââ âââ S VDS = 50V, ID = 11A
Qg
Total Gate Charge
âââ 18 29
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 4.5 âââ
VDS = 100V
âââ 1.4 âââ nC VGS = 10V
âââ 5.3 âââ
ID = 11A
âââ 6.8 âââ
See Fig. 6 and 18
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 6.7 âââ
RG(int)
td(on)
tr
td(off)
tf
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
âââ 3.2 âââ
âââ 7.8 âââ
â¦
Ãe VDD = 100V, VGS = 10V
âââ 12 âââ
ID = 11A
âââ 16 âââ ns RG = 2.4â¦
âââ 6.3 âââ
Ciss
Input Capacitance
âââ 1200 âââ
VGS = 0V
Coss
Output Capacitance
âââ 91 âââ pF VDS = 50V
Crss
Reverse Transfer Capacitance
âââ 20 âââ
Æ = 1.0MHz,
See Fig.5
Coss eff.
LD
Effective Output Capacitance
Internal Drain Inductance
âââ 110 âââ
VGS = 0V, VDS = 0V to 160V
âââ 4.5 âââ
Between lead,
D
nH 6mm (0.25in.)
LS
Internal Source Inductance
âââ 7.5 âââ
from package
G
and center of die contact
S
Avalanche Characteristics
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
Ãg Avalanche Current
g Repetitive Avalanche Energy
Typ.
Max.
âââ
94
See Fig. 14, 15, 16a, 16b
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
82
280
Max. Units
Conditions
18
MOSFET symbol
A showing the
52
integral reverse
p-n junction diode.
1.3
e V TJ = 25°C, IS = 11A, VGS = 0V
120
420
e ns TJ = 25°C, IF = 11A
nC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting TJ = 25°C, L = 1.62mH, RG = 25â¦, IAS = 11A.
 Pulse width ⤠400µs; duty cycle ⤠2%.
2
 Rθ is measured at TJ of approximately 90°C.
Â
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information.
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