 English |
|
|
|
|
|
|
|
| IRFB33N15DPBF Datasheet, PDF (2/12 Pages) International Rectifier – High frequency DC-DC converters | |||
| |||
| ◁ |
IRFB/IRFS/IRFSL33N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ âââ V
0.18 âââ V/°C
âââ 0.056 â¦
âââ 5.5 V
âââ 25 µA
âââ 250
âââ 100
nA
âââ -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 20A Â
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
14 âââ âââ
âââ 60 90
âââ 17 26
âââ 27 41
âââ 13 âââ
âââ 38 âââ
âââ 23 âââ
âââ 21 âââ
âââ 2020 âââ
âââ 400 âââ
âââ 91 âââ
âââ 2440 âââ
âââ 180 âââ
âââ 320 âââ
S VDS = 50V, ID = 20A
ID = 20A
nC VDS = 120V
VGS = 10V, ÂÂ
VDD = 75V
ns ID = 20A
RG = 3.6â¦
VGS = 10V⦠Â
VGS = 0V
VDS = 25V
pF Æ = 1.0MHzÂ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 120V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 120V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
330
20
17
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface Â
RθJA
Junction-to-AmbientÂ
RθJA
Junction-to-AmbientÂ
Diode Characteristics
âââ
0.90
0.50
âââ
°C/W
âââ
62
âââ
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ÂÂ
MOSFET symbol
D
âââ âââ 33
A showing the
âââ âââ 130
integral reverse
G
p-n junction diode.
S
VSD
Diode Forward Voltage
âââ âââ 1.3 V TJ = 25°C, IS = 20A, VGS = 0V Â
trr
Reverse Recovery Time
âââ 150 âââ ns TJ = 25°C, IF = 20A
Qrr
Reverse RecoveryCharge
âââ 920 âââ nC di/dt = 100A/µs Â
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese