IRFB3206GPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFETPower MOSFET

IRFB3077GPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Gate Input Resistance
75 –––
––– 0.091
––– 2.8
–––
–––
3.3
V V_GS = 0V, I_D = 250µA
d V/°C Reference to 25°C, I_D = 5mA
g _mΩ V_GS = 10V, I_D = 75A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
––– ––– 20
––– ––– 250
µA
V_DS = 75V, V_GS = 0V
V_DS = 75V, V_GS = 0V, T_J = 125°C
–––
–––
––– 100
––– -100
nA
V_GS = 20V
V_GS = -20V
––– 1.2 ––– Ω f = 1MHz, open drain
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
160 ––– –––
Q_g
Total Gate Charge
––– 160 220
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
––– 37 –––
––– 42 –––
t_d(on)
Turn-On Delay Time
t_r
Rise Time
––– 25 –––
––– 87 –––
t_d(off)
Turn-Off Delay Time
––– 69 –––
t_f
Fall Time
C_iss
Input Capacitance
––– 95 –––
––– 9400 –––
C_oss
Output Capacitance
––– 820 –––
C_rss
Reverse Transfer Capacitance
––– 350 –––
ià ^Coss ^{eff. (ER)} Effective Output Capacitance (Energy Related) ––– 1090 –––
h ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related)
––– 1260 –––
S V_DS = 50V, I_D = 75A
I_D = 75A
g nC VDS = 38V
V_GS = 10V
V_DD = 38V
ns
I_D = 75A
g ^{RG = 2.1Ω}
V_GS = 10V
V_GS = 0V
V_DS = 50V
pF ƒ = 1.0MHz,See Fig. 5
i V_GS = 0V, V_DS = 0V to 60V , See Fig.11
h V_GS = 0V, V_DS = 0V to 60V ,
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– –––
210
MOSFET symbol
––– ––– 850
A
showing the
integral reverse
D
G
p-n junction diode.
S
––– ––– 1.3
g V T_J = 25°C, I_S = 75A, V_GS = 0V
––– 42
––– 50
63
75
ns
T_J = 25°C
T_J = 125°C
–––
–––
59
86
89
130
nC
T_J = 25°C
T_J = 125°C
V_R = 64V,
g ^{IF = 75A}
di/dt = 100A/µs
––– 2.5 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.028mH
R_G = 25Ω, I_AS = 120A, V_GS =10V. Part not recommended for use
above this value.
„ I_SD ≤ 75A, di/dt ≤ 400A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
2
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_θ is measured at T_J approximately 90°C
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