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IRFB3004GPBF Datasheet, PDF (2/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS | |||
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IRFB3004GPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
40
âââ
âââ
âââ âââ
0.037 âââ
1.4 1.75
V VGS = 0V, ID = 250µA
d V/°C Reference to 25°C, ID = 5mA
g m⦠VGS = 10V, ID = 195A
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
âââ âââ 20 µA VDS = 40V, VGS = 0V
âââ âââ 250
VDS = 40V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ 2.2 âââ â¦
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
1170 âââ âââ
Qg
Total Gate Charge
âââ 160 240
Qgs
Gate-to-Source Charge
âââ 40 âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ 68 âââ
Qsync
Total Gate Charge Sync. (Qg - Qgd)
âââ 92 âââ
td(on)
Turn-On Delay Time
âââ 23 âââ
tr
Rise Time
âââ 220 âââ
td(off)
Turn-Off Delay Time
âââ 90 âââ
tf
Fall Time
âââ 130 âââ
Ciss
Input Capacitance
âââ 9200 âââ
Coss
Output Capacitance
âââ 2020 âââ
Crss
Reverse Transfer Capacitance
âââ 1340 âââ
ià Coss eff. (ER) Effective Output Capacitance (Energy Related)
âââ 2440 âââ
h Coss eff. (TR) Effective Output Capacitance (Time Related)
âââ 2690 âââ
S VDS = 10V, ID = 195A
nC ID = 187A
g VDS =20V
VGS = 10V
ID = 187A, VDS =0V, VGS = 10V
ns VDD = 26V
ID = 195A
g RG = 2.7â¦
VGS = 10V
pF VGS = 0V
VDS = 25V
Æ = 1.0 MHz, See Fig. 5
i VGS = 0V, VDS = 0V to 32V , See Fig. 11
h VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãd (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
 âââ âââ 340 A MOSFET symbol
D
showing the
âââ âââ 1310 A integral reverse
G
p-n junction diode.
S
g âââ âââ 1.3 V TJ = 25°C, IS = 195A, VGS = 0V
âââ 27 âââ ns TJ = 25°C
VR = 34V,
âââ 31 âââ
TJ = 125°C
âââ 18 âââ nC TJ = 25°C
g IF = 195A
di/dt = 100A/µs
âââ 41 âââ
TJ = 125°C
âââ 1.2 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction  ISD ⤠195A, di/dt ⤠930A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
temperature. Bond wire current limit is 195A. Note that current
Â
Pulse width ⤠400µs; duty cycle ⤠2%.
limitations arising from heating of the device leads may occur with  Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140)
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.016mH
RG = 25â¦, IAS = 195A, VGS =10V. Part not recommended for use
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 Rθ is measured at TJ approximately 90°C.
 RθJC value shown is at time zero
above this value .
2
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