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| IRFB23N20D Datasheet, PDF (2/11 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A) | |||
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IRFB/IRFS/IRFSL23N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ âââ
0.26 âââ
âââ 0.10
âââ 5.5
âââ 25
âââ 250
âââ 100
âââ -100
V
V/°C
â¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 14A Â
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
13 âââ âââ
âââ 57 86
âââ 14 21
âââ 27 40
âââ 14 âââ
âââ 32 âââ
âââ 26 âââ
âââ 16 âââ
âââ 1960 âââ
âââ 300 âââ
âââ 65 âââ
âââ 2200 âââ
âââ 120 âââ
âââ 220 âââ
S VDS = 50V, ID = 14A
ID = 14A
nC VDS = 160V
VGS = 10V, ÂÂ
VDD = 100V
ns ID = 14A
RG = 4.6â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
pF Æ = 1.0MHzÂ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
250
14
17
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface Â
RθJA
Junction-to-AmbientÂ
RθJA
Junction-to-AmbientÂ
Diode Characteristics
âââ
0.50
âââ
âââ
0.90
âââ
°C/W
62
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ÂÂ
MOSFET symbol
D
âââ âââ 24
A showing the
âââ âââ 96
integral reverse
G
p-n junction diode.
S
VSD
Diode Forward Voltage
âââ âââ 1.3 V TJ = 25°C, IS = 14A, VGS = 0V Â
trr
Reverse Recovery Time
âââ 200 300 ns TJ = 25°C, IF = 14A
Qrr
Reverse RecoveryCharge
âââ 1300 1940 nC di/dt = 100A/µs Â
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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