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IRFB23N15D Datasheet, PDF (2/11 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A) | |||
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IRFB/IRFS/IRFSL23N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ âââ V VGS = 0V, ID = 250µA
0.18 âââ V/°C Reference to 25°C, ID = 1mA
âââ 0.090 ⦠VGS = 10V, ID = 14A Â
âââ 5.5 V VDS = VGS, ID = 250µA
âââ 25
âââ 250
µA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
âââ 100 nA VGS = 30V
âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
11 âââ âââ
âââ 37 56
âââ 9.6 14
âââ 19 29
âââ 10 âââ
âââ 32 âââ
âââ 18 âââ
âââ 8.4 âââ
âââ 1200 âââ
âââ 260 âââ
âââ 65 âââ
âââ 1520 âââ
âââ 120 âââ
âââ 210 âââ
S VDS = 25V, ID = 14A
ID = 14A
nC VDS = 120V
VGS = 10V, Â
VDD = 75V
ns ID = 14A
RG = 5.1â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
pF Æ = 1.0MHzÂ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 120V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 120V Â
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
âââ
260
mJ
âââ
14
A
âââ
13.6
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface Â
RθJA
Junction-to-AmbientÂ
RθJA
Junction-to-AmbientÂ
Diode Characteristics
âââ
0.50
âââ
âââ
1.1
âââ
°C/W
62
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 23
A showing the
integral reverse
G
âââ âââ 92
p-n junction diode.
S
VSD
Diode Forward Voltage
âââ âââ 1.3 V TJ = 25°C, IS = 14A, VGS = 0V Â
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
âââ 150 220 ns TJ = 25°C, IF = 14A
âââ 0.8 1.2 µC di/dt = 100A/µs Â
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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