IRFB20N50K Datasheet, PDF (2/8 Pages) International Rectifier – SMPS MOSFET

IRFB20N50K
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage 500
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––
R_DS(on)
Static Drain-to-Source On-Resistance –––
V_GS(th)
Gate Threshold Voltage
3.0
–––
I_DSS
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
I_GSS
Gate-to-Source Reverse Leakage
–––
––– –––
0.61 –––
0.21 0.25
––– 5.0
––– 50
––– 250
––– 100
––– -100
V
V/°C
Ω
V
µA
µA
nA
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 12A „
V_DS = V_GS, I_D = 250µA
V_DS = 500V, V_GS = 0V
V_DS = 400V, V_GS = 0V, T_J = 125°C
V_GS = 30V
V_GS = -30V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g_fs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
11 ––– –––
––– ––– 110
––– ––– 33
––– ––– 54
––– 22 –––
––– 74 –––
––– 45 –––
––– 33 –––
––– 2870 –––
––– 320 –––
––– 34 –––
––– 3480 –––
––– 85 –––
––– 160 –––
S V_DS = 50V, I_D = 12A
I_D = 20A
nC V_DS = 400V
V_GS = 10V, See Fig. 6 and 13 „
V_DD = 250V
ns ^{ID = 20A}
R_G = 7.5Ω
V_GS = 10V,See Fig. 10 „
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz, See Fig. 5
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 400V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 400V …
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 20
A ^{showing the}
integral reverse
G
––– ––– 80
p-n junction diode.
S
––– ––– 1.5 V T_J = 25°C, I_S = 20A, V_GS = 0V „
––– 520 780 ns T_J = 25°C, I_F = 20A
––– 5.3 8.0 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting T_J = 25°C, L = 1.6mH, R_G = 25Ω,
I_AS = 20A,
ƒ I_SD ≤ 20A, di/dt ≤ 350A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
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