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IRFB18N50K Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A) | |||
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IRFB18N50K
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.59 âââ V/°C Reference to 25°C, ID = 1mA
âââ 0.26 0.29 ⦠VGS = 10V, ID = 10A Â
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
âââ âââ 50 µA VDS = 500V, VGS = 0V
âââ âââ 250 µA VDS = 400V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
6.4 âââ âââ
Qg
Total Gate Charge
âââ âââ 120
Qgs
Gate-to-Source Charge
âââ âââ 34
Qgd
Gate-to-Drain ("Miller") Charge
âââ âââ 54
td(on)
Turn-On Delay Time
âââ 22 âââ
tr
Rise Time
âââ 60 âââ
td(off)
Turn-Off Delay Time
âââ 45 âââ
tf
Fall Time
âââ 30 âââ
Ciss
Input Capacitance
âââ 2830 âââ
Coss
Output Capacitance
âââ 330 âââ
Crss
Reverse Transfer Capacitance
âââ 38 âââ
Coss
Output Capacitance
âââ 3310 âââ
Coss
Output Capacitance
âââ 93 âââ
Coss eff. Effective Output Capacitance
âââ 155 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 10A
ID = 17A
VDS = 400V
VGS = 10V, See Fig. 6 and 13 Â
VDD = 250V
ID = 17A
RG = 7.5â¦
VGS = 10V,See Fig. 10 Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 17
A showing the
integral reverse
G
âââ âââ 68
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 17A, VGS = 0V Â
âââ 520 780 ns TJ = 25°C, IF = 17A
âââ 5.3 8.0 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 2.5mH, RG = 25â¦,
IAS = 17A,
 ISD ⤠17A, di/dt ⤠149A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
2
 Pulse width ⤠300µs; duty cycle ⤠2%.
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