IRFB16N60L Datasheet, PDF (2/9 Pages) International Rectifier – SMPS MOSFET

IRFB16N60L
Static @ T_J = 25°C (unless otherwise specified)
Symbol
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
I_GSS
R_G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
600
–––
–––
3.0
–––
–––
–––
–––
–––
Typ.
–––
0.39
385
–––
–––
–––
–––
–––
0.79
Max. Units
Conditions
––– V V_GS = 0V, I_D = 250µA
f ^{––– V/°C Reference to 25°C, ID = 1mA}
460 mΩ V_GS = 10V, I_D = 9.0A
5.0 V V_DS = V_GS, I_D = 250µA
50 µA V_DS = 600V, V_GS = 0V
2.0 mA V_DS = 480V, V_GS = 0V, T_J = 125°C
100 nA V_GS = 30V
-100
V_GS = -30V
––– Ω f = 1MHz, open drain
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
gfs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff.
C_oss eff. (ER)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
Min.
8.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
20
44
28
5.5
2720
260
20
120
100
Max. Units
Conditions
––– S V_DS = 50V, I_D = 9.0A
100
I_D = 16A
30
46
f nC VDS = 480V
V_GS = 10V, See Fig. 7 & 15
–––
V_DD = 300V
––– ns I_D = 16A
–––
–––
f ^{RG = 1.8Ω}
V_GS = 10V, See Fig. 11a & 11b
–––
V_GS = 0V
–––
V_DS = 25V
––– pF ƒ = 1.0MHz, See Fig. 5
–––
g V_GS = 0V,V_DS = 0V to 480V
–––
(Energy Related)
Avalanche Characteristics
Symbol
E_AS
I_AR
E_AR
d ^Parameter
Single Pulse Avalanche Energy.
Ù Avalanche Current
™ Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θJA
h ^Parameter
Junction-to-Case
h Junction-to-Ambient
Typ.
–––
–––
–––
Typ.
–––
–––
Max.
310
16
31
Max.
0.4
62
Units
mJ
A
mJ
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 12)
‚ Starting T_J = 25°C, L = 2.5mH, R_G = 25Ω,
I_AS = 16A.(See Figure 14a)
ƒ I_SD ≤ 16A, di/dt ≤ 650A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C.
2
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
C_oss eff.(ER) is a fixed capacitance that stores the same energy
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† R_θ is measured at T_J approximately 90°C
www.irf.com